Evidence map›Paper›PMID 34263560›Full record

ArticleAdvanced science (Weinheim, Baden-Wurttemberg, Germany)2021

Universal Strategy for Improving Perovskite Photodiode Performance: Interfacial Built-In Electric Field Manipulated by Unintentional Doping.

Dan Wu, Wenhui Li, Haochen Liu, Xiangtian Xiao, Kanming Shi, Haodong Tang, Chengwei Shan, Kai Wang, Xiao Wei Sun, Aung Ko Ko Kyaw

Abstract read
In one paragraph

Article in Advanced science (Weinheim, Baden-Wurttemberg, Germany), 2021. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 4 papers.

0numbers the graph read from it
0cells of the map it votes in
4citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

4 citing papers in PubMed.

  1. Article
  2. Article
  3. Article
  4. Article
4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

10 authors.

Dan WuGuangdong University Key Laboratory for Advanced Quantum Dot Displays, Shenzhen Key Laboratory for Advanced Quantum Dot Displays and Lighting, Department of Electrical & Electronic Engineering, Southern University of Science and Technology, Xueyuan Blvd. 1088, Shenzhen, 518055, P. R. China.
Wenhui LiGuangdong University Key Laboratory for Advanced Quantum Dot Displays, Shenzhen Key Laboratory for Advanced Quantum Dot Displays and Lighting, Department of Electrical & Electronic Engineering, Southern University of Science and Technology, Xueyuan Blvd. 1088, Shenzhen, 518055, P. R. China.
Haochen LiuGuangdong University Key Laboratory for Advanced Quantum Dot Displays, Shenzhen Key Laboratory for Advanced Quantum Dot Displays and Lighting, Department of Electrical & Electronic Engineering, Southern University of Science and Technology, Xueyuan Blvd. 1088, Shenzhen, 518055, P. R. China.
Xiangtian XiaoGuangdong University Key Laboratory for Advanced Quantum Dot Displays, Shenzhen Key Laboratory for Advanced Quantum Dot Displays and Lighting, Department of Electrical & Electronic Engineering, Southern University of Science and Technology, Xueyuan Blvd. 1088, Shenzhen, 518055, P. R. China.
Kanming ShiLight, Nanomaterials, Nanotechnologies (L2n) Laboratory, CNRS ERL 7004, and Department of Optical Nanotechnologies, University of Technology of Troyes, Troyes, 10004, France.
Haodong TangGuangdong University Key Laboratory for Advanced Quantum Dot Displays, Shenzhen Key Laboratory for Advanced Quantum Dot Displays and Lighting, Department of Electrical & Electronic Engineering, Southern University of Science and Technology, Xueyuan Blvd. 1088, Shenzhen, 518055, P. R. China.
Chengwei ShanGuangdong University Key Laboratory for Advanced Quantum Dot Displays, Shenzhen Key Laboratory for Advanced Quantum Dot Displays and Lighting, Department of Electrical & Electronic Engineering, Southern University of Science and Technology, Xueyuan Blvd. 1088, Shenzhen, 518055, P. R. China.
Kai WangGuangdong University Key Laboratory for Advanced Quantum Dot Displays, Shenzhen Key Laboratory for Advanced Quantum Dot Displays and Lighting, Department of Electrical & Electronic Engineering, Southern University of Science and Technology, Xueyuan Blvd. 1088, Shenzhen, 518055, P. R. China.
Xiao Wei SunGuangdong University Key Laboratory for Advanced Quantum Dot Displays, Shenzhen Key Laboratory for Advanced Quantum Dot Displays and Lighting, Department of Electrical & Electronic Engineering, Southern University of Science and Technology, Xueyuan Blvd. 1088, Shenzhen, 518055, P. R. China.ORCID https://orcid.org/0000-0002-2840-1880
Aung Ko Ko KyawGuangdong University Key Laboratory for Advanced Quantum Dot Displays, Shenzhen Key Laboratory for Advanced Quantum Dot Displays and Lighting, Department of Electrical & Electronic Engineering, Southern University of Science and Technology, Xueyuan Blvd. 1088, Shenzhen, 518055, P. R. China.ORCID https://orcid.org/0000-0003-2399-9788

Funding

Guangdong Basic and Applied Basic Research Foundation 2020A1515010916Guangdong province 2019KTSCX157Guangdong University Key Laboratory for Advanced Quantum Dot Displays and Lighting 2017KSYS007High-level University Fund G02236004National Key R&D Program of China 2019YFB1704600National Natural Science Foundation of China 61905107Shenzhen Innovation Project JCYJ20190809152411655Shenzhen Peacock Plan KQTD2016030111203005Shenzhen Peacock Team Project KQTD2016030111203005
6 · The paper itself

Abstract

Organic-inorganic halide perovskites have demonstrated significant light detection potential, with a performance comparable to that of commercially available photodetectors. In this study, a general design guideline, which is applicable to both inverted and regular structures, is proposed for high-performance perovskite photodiodes through an interfacial built-in electric field (E) for efficient carrier separation and transport. The interfacial E generated at the interface between the active and charge transport layers far from the incident light is critical for effective charge carrier collection. The interfacial E can be modulated by unintentional doping of the perovskite, whose doping type and density can be easily controlled by the post-annealing time and temperature. Employing the proposed design guideline, the inverted and regular perovskite photodiodes exhibit the external quantum efficiency of 83.51% and 76.5% and responsivities of 0.37 and 0.34 A W

Indexed as

interfacial built-in electric fieldperovskite photodiodesunintentional doping

Identifiers

PMID34263560
PMCPMC8456202

What OpenQuestion holds

Textmetadata
LicenceCC BY
Read underepoch 390

Registered trials

None linked

Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.