ArticleAdvanced science (Weinheim, Baden-Wurttemberg, Germany)2021
Ambipolar Charge Storage in Type-I Core/Shell Semiconductor Quantum Dots toward Optoelectronic Transistor-Based Memories.
Article in Advanced science (Weinheim, Baden-Wurttemberg, Germany), 2021. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 5 papers.
What it found
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The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.
The trial behind it
Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.
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Who cites it
5 citing papers in PubMed.
- Flexible organic thin-film transistors for all-in-one retinomorphic acceleration enabled by inorganic-organic heterogeneous dielectrics.Nature communications · 2026Article
- Controllable Charge Storability in InP/ZnSe Core/Shell Quantum Dots toward Bioinspired Optical Synaptic Application.Advanced science (Weinheim, Baden-Wurttemberg, Germany) · 2026Article
- Multifunctional Colloidal Quantum Dots-Based Light-Emitting Devices for On-Chip Integration.Nanomaterials (Basel, Switzerland) · 2025Review
- Metamorphosis from Quantum Dots to Quantum Shells and Highly Efficient Quantum Shell Light-Emitting Diodes.Advanced science (Weinheim, Baden-Wurttemberg, Germany) · 2025Article
- Ambipolar Charge Storage in Type-I Core/Shell Semiconductor Quantum Dots toward Optoelectronic Transistor-Based Memories.Advanced science (Weinheim, Baden-Wurttemberg, Germany) · 2021Article
Corrections and comments
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Authors and funding
7 authors.
Funding
Abstract
Efficient charge storage media play a pivotal role in transistor-based memories and thus are under intense research. In this work, the charge storage ability of type-I InP/ZnS core/shell quantum dots is well revealed through studying a pentacene-based organic transistor with the quantum dots (QDs) integrated. The quantum well-like energy band structure enables the QDs to directly confine either holes or electrons in the core, signifying a dielectric layer-free nonvolatile memory. Especially, the QDs in this device can be charged by electrons using light illumination as the exclusive method. The electron charging process is ascribed to the photoexcitation process in the InP-core and the hot holes induced. The QDs layer demonstrates an electron storage density of ≈5.0 × 10
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Registered trials
Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.