ArticleAdvanced materials (Deerfield Beach, Fla.)2021
Significant Performance Improvement in n-Channel Organic Field-Effect Transistors with C
Article in Advanced materials (Deerfield Beach, Fla.), 2021. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 5 papers.
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The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.
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Who cites it
5 citing papers in PubMed.
- Tuning of Optoelectronic Properties in Oligo(phenyleneethynylene)-Based Cocrystals through Modulation of Charge-Transfer Interactions.ACS omega · 2025Article
- Core-Hole Excitation Spectra of the Oxides and Hydrates of Fullerene CMolecules (Basel, Switzerland) · 2024Article
- Wearable in-sensor reservoir computing using optoelectronic polymers with through-space charge-transport characteristics for multi-task learning.Nature communications · 2023Article
- Y6 Organic Thin-Film Transistors with Electron Mobilities of 2.4 cmAdvanced science (Weinheim, Baden-Wurttemberg, Germany) · 2022Article
- Significant Performance Improvement in n-Channel Organic Field-Effect Transistors with CAdvanced materials (Deerfield Beach, Fla.) · 2021Article
Corrections and comments
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Authors and funding
8 authors.
Funding
No grant is acknowledged in the PubMed record.
Abstract
Solution-processed organic field-effect transistors (OFETs) have attracted great interest due to their potential as logic devices for bendable and flexible electronics. In relation to n-channel structures, soluble fullerene semiconductors have been widely studied. However, they have not yet met the essential requirements for commercialization, primarily because of low charge carrier mobility, immature large-scale fabrication processes, and insufficient long-term operational stability. Interfacial engineering of the carrier-injecting source/drain (S/D) electrodes has been proposed as an effective approach to improve charge injection, leading also to overall improved device characteristics. Here, it is demonstrated that a non-conjugated neutral dipolar polymer, poly(2-ethyl-2-oxazoline) (PEOz), formed as a nanodot structure on the S/D electrodes, enhances electron mobility in n-channel OFETs using a range of soluble fullerenes. Overall performance is especially notable for (C
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