ArticleScientific reports2021
Reduced graphene oxide on silicon-based structure as novel broadband photodetector.
Article in Scientific reports, 2021. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 10 papers.
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Who cites it
10 citing papers in PubMed.
- Temperature Dependence of Electronic Transport Mechanisms in rGO-Based Photodetectors.Nanomaterials (Basel, Switzerland) · 2026Article
- Acid-less direct gram scale exfoliation of graphite to partially oxidized graphene.Scientific reports · 2025Article
- Enhancing the photoresponse performance of graphene on silicon-based heterojunction as a broadband photodetector.Scientific reports · 2025Article
- Enhanced response of an infrared photodetector based on hybridization between reduced graphene oxide and up-conversion microparticles.RSC advances · 2025Article
- Statistical Analysis of the Influence of Various Types of Graphite Precursors and Oxidation Methods on the Gas Sensor Properties of Reduced Graphene Oxide.Sensors (Basel, Switzerland) · 2024Article
- Investigation of Graphene Single Layer on P-Type and N-Type Silicon Heterojunction Photodetectors.Sensors (Basel, Switzerland) · 2024Article
- Role of oxygen functional groups and attachment of Au nanoparticles on graphene oxide sheets for improved photodetection performance.Nanoscale advances · 2024Article
- Temperature dependence of electrical conductivity and variable hopping range mechanism on graphene oxide films.Scientific reports · 2023Article
- Mechanisms of NOSensors (Basel, Switzerland) · 2022Review
- Plasmon-enhanced reduced graphene oxide photodetector with monometallic of Au and Ag nanoparticles at VIS-NIR region.Scientific reports · 2021Article
Corrections and comments
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Authors and funding
8 authors.
Funding
No grant is acknowledged in the PubMed record.
Abstract
Heterojunction photodetector based on reduced graphene oxide (rGO) has been realized using a spin coating technique. The electrical and optical characterization of bare GO and thermally reduced GO thin films deposited on glass substrate has been carried out. Ultraviolet-visible-infrared transmittance measurements of the GO and rGO thin films revealed broad absorption range, while the absorbance analysis evaluates rGO band gap of about 2.8 eV. The effect of GO reduction process on the photoresponse capability is reported. The current-voltage characteristics and the responsivity of rGO/n-Si based device have been investigated using laser diode wavelengths from UV up to IR spectral range. An energy band diagram of the heterojunction has been proposed to explain the current versus voltage characteristics. The device demonstrates a photoresponse at a broad spectral range with a maximum responsivity and detectivity of 0.20 A/W and 7 × 10
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Registered trials
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