ArticleNature communications2021
Position-controlled quantum emitters with reproducible emission wavelength in hexagonal boron nitride.
Article in Nature communications, 2021. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 44 papers.
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Who cites it
44 citing papers in PubMed.
- Nitride-Based Quantum Structures in Optoelectronics-A Survey of Colors.Materials (Basel, Switzerland) · 2026Review
- Spin-photon qubits for scalable quantum network.Light, science & applications · 2026Review
- Laser direct writing and Raman Stokes contrast screening of quantum emitter sites in hBN.Discover nano · 2026Article
- Identifying the Origin of Hexagonal Boron Nitride Single Photon Emitters with nano-FTIR.The journal of physical chemistry letters · 2026Article
- Resonance fluorescence and indistinguishable photons from a coherently driven B centre in hBN.Nature communications · 2026Article
- Defect Engineering in Large-Scale CVD-Grown Hexagonal Boron Nitride: Formation, Spectroscopy, and Spin Relaxation Dynamics.Small (Weinheim an der Bergstrasse, Germany) · 2026Article
- Optically active spins in van der Waals materials and devices.MRS bulletin · 2026Review
- Deterministic formation of carbon-functionalized quantum emitters in hexagonal boron nitride.Nature communications · 2025Article
- Systematic investigation of the generation of luminescent emitters in hBN via irradiation engineering.Scientific reports · 2025Article
- Nanometer Resolution Structure-Emission Correlation of Individual Quantum Emitters via Enhanced Cathodoluminescence in Twisted Hexagonal Boron Nitride.Advanced materials (Deerfield Beach, Fla.) · 2025Article
- Strong Quantum Confinement of 2D Excitons in an Engineered 1D Potential Induced by Proximal Ferroelectric Domain Walls.Nano letters · 2025Article
- Roadmap for Photonics with 2D Materials.ACS photonics · 2025Review
- Microsphere-assisted generation of localized optical emitters in 2D hexagonal boron nitride.Nanophotonics (Berlin, Germany) · 2025Article
- Room-temperature high-purity single-photon emission from carbon-doped boron nitride thin films.Science advances · 2025Article
- Magnetic brightening and its dynamics of defect-localized exciton emission in monolayer two-dimensional semiconductor.Science advances · 2025Article
- Quantum efficiency of the B-center in hexagonal boron nitride.Nanophotonics (Berlin, Germany) · 2025Article
- Low-dimensional solid-state single-photon emitters.Nanophotonics (Berlin, Germany) · 2025Review
- Collective single-photon emission and energy transfer in thin-layer dielectric and plasmonic systems.Nanophotonics (Berlin, Germany) · 2025Article
- Emergent 2D van der Waals materials photonic sources.Nanophotonics (Berlin, Germany) · 2025Review
- Deterministic generation and nanophotonic integration of 2D quantum emitters for advanced quantum photonic functionalities.Nanophotonics (Berlin, Germany) · 2025Article
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Authors and funding
12 authors.
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Abstract
Single photon emitters (SPEs) in low-dimensional layered materials have recently gained a large interest owing to the auspicious perspectives of integration and extreme miniaturization offered by this class of materials. However, accurate control of both the spatial location and the emission wavelength of the quantum emitters is essentially lacking to date, thus hindering further technological steps towards scalable quantum photonic devices. Here, we evidence SPEs in high purity synthetic hexagonal boron nitride (hBN) that can be activated by an electron beam at chosen locations. SPE ensembles are generated with a spatial accuracy better than the cubed emission wavelength, thus opening the way to integration in optical microstructures. Stable and bright single photon emission is subsequently observed in the visible range up to room temperature upon non-resonant laser excitation. Moreover, the low-temperature emission wavelength is reproducible, with an ensemble distribution of width 3 meV, a statistical dispersion that is more than one order of magnitude lower than the narrowest wavelength spreads obtained in epitaxial hBN samples. Our findings constitute an essential step towards the realization of top-down integrated devices based on identical quantum emitters in 2D materials.
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