ArticleLight, science & applications2021
Structural and compositional analysis of (InGa)(AsSb)/GaAs/GaP Stranski-Krastanov quantum dots.
Article in Light, science & applications, 2021. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 5 papers.
What it found
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The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.
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Who cites it
5 citing papers in PubMed.
- Mid-Infrared High-Power InGaAsSb/AlGaInAsSb Multiple-Quantum-Well Laser Diodes Around 2.9 μm.Nanomaterials (Basel, Switzerland) · 2025Article
- Novel InGaSb/AlP Quantum Dots for Non-Volatile Memories.Nanomaterials (Basel, Switzerland) · 2022Article
- Control of Morphology and Substrate Etching in InAs/InP Droplet Epitaxy Quantum Dots for Single and Entangled Photon Emitters.ACS applied nano materials · 2022Article
- Dimension-Dependent Phenomenological Model of Excitonic Electric Dipole in InGaAs Quantum Dots.Nanomaterials (Basel, Switzerland) · 2022Article
- Modeling electronic and optical properties of III-V quantum dots-selected recent developments.Light, science & applications · 2022Review
Corrections and comments
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Authors and funding
10 authors.
Funding
Abstract
We investigated metal-organic vapor phase epitaxy grown (InGa)(AsSb)/GaAs/GaP Stranski-Krastanov quantum dots (QDs) with potential applications in QD-Flash memories by cross-sectional scanning tunneling microscopy (X-STM) and atom probe tomography (APT). The combination of X-STM and APT is a very powerful approach to study semiconductor heterostructures with atomic resolution, which provides detailed structural and compositional information on the system. The rather small QDs are found to be of truncated pyramid shape with a very small top facet and occur in our sample with a very high density of ∼4 × 10
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Registered trials
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