Evidence map›Paper›PMID 34110675›Full record

ArticleSmall (Weinheim an der Bergstrasse, Germany)2021

Mobility Extraction in 2D Transition Metal Dichalcogenide Devices-Avoiding Contact Resistance Implicated Overestimation.

Chin-Sheng Pang, Ruiping Zhou, Xiangkai Liu, Peng Wu, Terry Y T Hung, Shiqi Guo, Mona E Zaghloul, Sergiy Krylyuk, Albert V Davydov, Joerg Appenzeller and 1 more

Abstract read
PubMed Full text at PMC Publisher
In one paragraph

Article in Small (Weinheim an der Bergstrasse, Germany), 2021. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 4 papers.

0numbers the graph read from it
0cells of the map it votes in
4citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

4 citing papers in PubMed.

  1. Article
  2. Advances in 2D materials for wearable biomonitoring.Materials science & engineering. R, Reports : a review journal · 2025
    Article
  3. Article
  4. Article
4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

11 authors.

Chin-Sheng PangBirck Nanotechnology Center, Department of Electrical and Computer Engineering, Purdue University, 1205 W State St, West Lafayette, IN, 47907, USA.ORCID https://orcid.org/0000-0001-8347-4102
Ruiping ZhouBirck Nanotechnology Center, Department of Electrical and Computer Engineering, Purdue University, 1205 W State St, West Lafayette, IN, 47907, USA.
Xiangkai LiuBirck Nanotechnology Center, Department of Electrical and Computer Engineering, Purdue University, 1205 W State St, West Lafayette, IN, 47907, USA.
Peng WuBirck Nanotechnology Center, Department of Electrical and Computer Engineering, Purdue University, 1205 W State St, West Lafayette, IN, 47907, USA.
Terry Y T HungBirck Nanotechnology Center, Department of Electrical and Computer Engineering, Purdue University, 1205 W State St, West Lafayette, IN, 47907, USA.
Shiqi GuoSchool of Engineering and Applied Science, The George Washington University, Washington, DC, 20052, USA.
Mona E ZaghloulSchool of Engineering and Applied Science, The George Washington University, Washington, DC, 20052, USA.
Sergiy KrylyukMaterials Science and Engineering Division, National Institute of Standards and Technology (NIST), Gaithersburg, MD, 20899, USA.
Albert V DavydovMaterials Science and Engineering Division, National Institute of Standards and Technology (NIST), Gaithersburg, MD, 20899, USA.
Joerg AppenzellerBirck Nanotechnology Center, Department of Electrical and Computer Engineering, Purdue University, 1205 W State St, West Lafayette, IN, 47907, USA.
Zhihong ChenBirck Nanotechnology Center, Department of Electrical and Computer Engineering, Purdue University, 1205 W State St, West Lafayette, IN, 47907, USA.

Funding

Intramural NIST DOC 9999-NISTNIST 70NANB17H041Semiconductor Research Corporation
6 · The paper itself

Abstract

Schottky barrier (SB) transistors operate distinctly different from conventional metal-oxide semiconductor field-effect transistors, in a unique way that the gate impacts the carrier injection from the metal source/drain contacts into the channel region. While it has been long recognized that this can have severe implications for device characteristics in the subthreshold region, impacts of contact gating of SB in the on-state of the devices, which affects evaluation of intrinsic channel properties, have been yet comprehensively studied. Due to the fact that contact resistance (R

Indexed as

dopingmobility overestimationsSchottky barrier devicesthin gate dielectricstransition metal dichalcogenides

Identifiers

PMID34110675
PMCPMC9703574

What OpenQuestion holds

Textmetadata
LicenceTDM
Read underepoch 390

Registered trials

None linked

Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.