Evidence map›Paper›PMID 34105270›Full record

ArticleAdvanced science (Weinheim, Baden-Wurttemberg, Germany)2021

Improved Contact Resistance by a Single Atomic Layer Tunneling Effect in WS

Jihoon Kim, A Venkatesan, Hanul Kim, Yewon Kim, Dongmok Whang, Gil-Ho Kim

Abstract read
In one paragraph

Article in Advanced science (Weinheim, Baden-Wurttemberg, Germany), 2021. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 1 paper.

0numbers the graph read from it
0cells of the map it votes in
1citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

1 citing paper in PubMed.

  1. Improved Contact Resistance by a Single Atomic Layer Tunneling Effect in WSAdvanced science (Weinheim, Baden-Wurttemberg, Germany) · 2021
    Article
4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

6 authors.

Jihoon KimSchool of Electronic and Electrical Engineering, Sungkyunkwan University (SKKU), Suwon, 16419, Republic of Korea.
A VenkatesanSchool of Electronic and Electrical Engineering, Sungkyunkwan University (SKKU), Suwon, 16419, Republic of Korea.
Hanul KimSamsung-SKKU Graphene Centre, Sungkyunkwan Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University (SKKU), Suwon, 16419, Republic of Korea.
Yewon KimSchool of Electronic and Electrical Engineering, Sungkyunkwan University (SKKU), Suwon, 16419, Republic of Korea.
Dongmok WhangSamsung-SKKU Graphene Centre, Sungkyunkwan Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University (SKKU), Suwon, 16419, Republic of Korea.
Gil-Ho KimSchool of Electronic and Electrical Engineering, Sungkyunkwan University (SKKU), Suwon, 16419, Republic of Korea.ORCID https://orcid.org/0000-0002-5153-4235

Funding

National Research Foundation of Korea 2018R1D1A1B07048985National Research Foundation of Korea 2019R1A2C2088719
6 · The paper itself

Abstract

Manipulation of Ohmic contacts in 2D transition metal dichalcogenides for enhancing the transport properties and enabling its application as a practical device has been a long-sought goal. In this study, n-type tungsten disulfide (WS

Indexed as

contact resistancemonolayertunnelingvdW heterostructuresWS2/MoTe2

Identifiers

PMID34105270
PMCPMC8188188

What OpenQuestion holds

Textmetadata
LicenceCC BY
Read underepoch 390

Registered trials

None linked

Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.