Evidence map›Paper›PMID 34036789›Full record

ArticleACS applied materials & interfaces2021

Boosting Polarization Switching-Induced Current Injection by Mechanical Force in Ferroelectric Thin Films.

Fengyuan Zhang, Hua Fan, Bing Han, Yudong Zhu, Xiong Deng, David Edwards, Amit Kumar, Deyang Chen, Xingsen Gao, Zhen Fan and 1 more

Open access · hybridAbstract read
PubMed Full text at PMC Publisher
In one paragraph

Article in ACS applied materials & interfaces, 2021. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 4 papers.

0numbers the graph read from it
0cells of the map it votes in
4citing papers in PubMed
0.8field-weighted citation impact, top 32% of its field
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

4 citing papers in PubMed, 14 citations in OpenAlex.

  1. Mechanical control of polar order.Science advances · 2026
    Article
  2. Article
  3. Article
  4. Phase Conductance of BiFeOSensors (Basel, Switzerland) · 2023
    Article
4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

11 authors at 4 institutions in 3 countries.

Fengyuan ZhangSchool of Physics, University College Dublin, Belfield, Dublin D04 V1W8, Ireland.ORCID https://orcid.org/0000-0001-6302-3574
Hua FanInstitute for Quantum Science and Engineering, and Department of Physics, Southern University of Science and Technology, Shenzhen 518055, People's Republic of China.
Bing HanDepartment of Materials Science and Engineering, Southern University of Science and Technology, Shenzhen 518055, People's Republic of China.ORCID https://orcid.org/0000-0001-8143-3964
Yudong ZhuDepartment of Materials Science and Engineering, Southern University of Science and Technology, Shenzhen 518055, People's Republic of China.
Xiong DengInstitute for Advanced Materials and Guangdong Provincial Key Laboratory of Optical Information Materials and Technology, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, People's Republic of China.
David EdwardsSchool of Physics, University College Dublin, Belfield, Dublin D04 V1W8, Ireland.
Amit KumarCentre for Nanostructured Media, School of Mathematics and Physics, Queen's University Belfast, Belfast BT7 1NN, U.K.
Deyang ChenInstitute for Advanced Materials and Guangdong Provincial Key Laboratory of Optical Information Materials and Technology, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, People's Republic of China.ORCID https://orcid.org/0000-0002-8370-6409
Xingsen GaoInstitute for Advanced Materials and Guangdong Provincial Key Laboratory of Optical Information Materials and Technology, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, People's Republic of China.ORCID https://orcid.org/0000-0002-2725-0785
Zhen FanInstitute for Advanced Materials and Guangdong Provincial Key Laboratory of Optical Information Materials and Technology, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, People's Republic of China.
Brian J RodriguezSchool of Physics, University College Dublin, Belfield, Dublin D04 V1W8, Ireland.ORCID https://orcid.org/0000-0001-9419-2717
South China Normal University · CNSouthern University of Science and Technology · CNUniversity College Dublin · IEQueen's University Belfast · GB

Funding

No grant is acknowledged in the PubMed record.

6 · The paper itself

Abstract

When scaling the lateral size of a ferroelectric random access memory (FeRAM) device down to the nanometer range, the polarization switching-induced displacement current becomes small and challenging to detect, which greatly limits the storage density of FeRAM. Here, we report the observation of significantly enhanced injection currents, much larger than typical switching currents, induced by polarization switching in BiFeO

Indexed as

BiFeO3FeRAMferroelectricinjected currentmechanical force

Identifiers

PMID34036789
PMCPMC8289170
OpenAlexW3212749951

What OpenQuestion holds

Textmetadata
LicenceCC BY
Read underepoch 390

Registered trials

None linked

Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.