ArticleAdvanced science (Weinheim, Baden-Wurttemberg, Germany)2021
Spin-Torque Memristors Based on Perpendicular Magnetic Tunnel Junctions for Neuromorphic Computing.
Article in Advanced science (Weinheim, Baden-Wurttemberg, Germany), 2021. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 19 papers.
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Who cites it
19 citing papers in PubMed.
- Fully reversible electric-field control of magnetization in FeNature communications · 2026Article
- Picosecond switching of magnetic tunnel junctions by spin-orbit torque.Science advances · 2026Article
- Ambipolar Organic-Inorganic Heterostructure Transistor Array for Integrated Visual Information Processing.Advanced science (Weinheim, Baden-Wurttemberg, Germany) · 2026Article
- Memristive Physical Reservoir Computing.Advanced science (Weinheim, Baden-Wurttemberg, Germany) · 2026Review
- Recent Advances and Perspectives on Field-Effect Transistors for Artificial Visual Neuromorphic Systems.Advanced science (Weinheim, Baden-Wurttemberg, Germany) · 2026Review
- Device engineering for photocurrent detected magnetic resonance and scanning probes using solid-state spin defects.Science and technology of advanced materials · 2026Review
- A Study on the Synaptic Behavior of Al/ZrOACS applied materials & interfaces · 2025Article
- All-Electrical Control of Spin Synapses for Neuromorphic Computing: Bridging Multi-State Memory with Quantization for Efficient Neural Networks.Advanced science (Weinheim, Baden-Wurttemberg, Germany) · 2025Article
- Orbital Coupling and Spin Textures of Fe/Pd Thin Films Grown on Si Substrate with High Magnetic Fields.Advanced science (Weinheim, Baden-Wurttemberg, Germany) · 2025Article
- Magnetoionics for Synaptic Devices and Neuromorphic Computing: Recent Advances, Challenges, and Future Perspectives.Small science · 2024Article
- Biomimetic Neuromorphic Sensory System via Electrolyte Gated Transistors.Sensors (Basel, Switzerland) · 2024Review
- Resistive Switching Devices for Neuromorphic Computing: From Foundations to Chip Level Innovations.Nanomaterials (Basel, Switzerland) · 2024Review
- A comprehensive review of advanced trends: from artificial synapses to neuromorphic systems with consideration of non-ideal effects.Frontiers in neuroscience · 2024Review
- Shaping Perpendicular Magnetic Anisotropy of CoSensors (Basel, Switzerland) · 2023Article
- Advances in Emerging Photonic Memristive and Memristive-Like Devices.Advanced science (Weinheim, Baden-Wurttemberg, Germany) · 2022Review
- From Quantum Materials to Microsystems.Materials (Basel, Switzerland) · 2022Article
- High On/Off Ratio Spintronic Multi-Level Memory Unit for Deep Neural Network.Advanced science (Weinheim, Baden-Wurttemberg, Germany) · 2022Article
- Spin-Torque Memristors Based on Perpendicular Magnetic Tunnel Junctions for Neuromorphic Computing.Advanced science (Weinheim, Baden-Wurttemberg, Germany) · 2021Article
- Engineering Spiking Neurons Using Threshold Switching Devices for High-Efficient Neuromorphic Computing.Frontiers in neuroscience · 2021Article
Corrections and comments
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Authors and funding
14 authors.
Funding
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Abstract
Spin-torque memristors are proposed in 2009, and can provide fast, low-power, and infinite memristive behavior for neuromorphic computing and large-density non-volatile memory. However, the strict requirements of combining high magnetoresistance, stable domain wall pinning and current-induced switching in a single device pose difficulties in physical implementation. Here, a nanoscale spin-torque memristor based on a perpendicular-anisotropy magnetic tunnel junction with a CoFeB/W/CoFeB composite free layer structure is experimentally demonstrated. Its tunneling magnetoresistance is higher than 200%, and memristive behavior can be realized by spin-transfer torque switching. Memristive states are retained by strong domain wall pinning effects in the free layer. Experiments and simulations suggest that nanoscale vertical chiral spin textures can form around clusters of W atoms under the combined effect of opposite Dzyaloshinskii-Moriya interactions and the Ruderman-Kittel-Kasuya-Yosida interaction between the two CoFeB free layers. Energy fluctuation caused by these textures may be the main reason for the strong pinning effect. With the experimentally demonstrated memristive behavior and spike-timing-dependent plasticity, a spiking neural network to perform handwritten pattern recognition in an unsupervised manner is simulated. Due to advantages such as long endurance and high speed, the spin-torque memristors are competitive in the future applications for neuromorphic computing.
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