ArticleNature nanotechnology2021
Atomically sharp interface enabled ultrahigh-speed non-volatile memory devices.
Article in Nature nanotechnology, 2021. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 38 papers.
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Who cites it
38 citing papers in PubMed.
- Two-Dimensional Indium Selenide for Next-Generation Electronics.International journal of molecular sciences · 2026Review
- Ultrafast non-volatile charge storage and mid-infrared photoluminescence in LuminoMem tellurium devices for in-memory computing.Nature communications · 2026Article
- Stable Analog Weight Programming in Single-Crystalline van der Waals Ferroelectric Transistors for Reliable Computing-in-Memory.Advanced materials (Deerfield Beach, Fla.) · 2026Article
- Ultrafast switching and high-endurance nonvolatile memory enabled by intrinsic switchable polarization in semiconducting Janus monolayers.Nature communications · 2026Article
- Trustworthy tree-based machine learning by MoSNature communications · 2026Article
- Coupled polarization dynamics and charge tunneling enable reconfigurable heterojunctions.Nature communications · 2026Article
- Nanogate ferroelectric transistors with ultralow operation voltage of 0.6 V.Science advances · 2026Article
- Ultrafast visual perception beyond human capabilities enabled by motion analysis using synaptic transistors.Nature communications · 2026Article
- Sb-contacted MoSNature nanotechnology · 2026Article
- Dipole-Driven Charge Trapping in Monolayer Janus MoSSe for Ultrathin Nonvolatile Memory Devices.Nano-micro letters · 2026Article
- High-κ samarium oxysulfate dielectric for two-dimensional electronics with enhanced gate coupling.Nature communications · 2025Article
- Observing and Suppressing Metallization in MoSACS applied materials & interfaces · 2025Article
- 11-bit two-dimensional floating-gate memories.Nature communications · 2025Article
- Article
- Fowler-Nordheim Tunneling in AlGaN MIS Heterostructures with Atomically ThinNanomaterials (Basel, Switzerland) · 2025Article
- 2D computational photodetectors enabling multidimensional optical information perception.Nature communications · 2025Review
- Next-Generation Image Sensors Based on Low-Dimensional Semiconductor Materials.Advanced materials (Deerfield Beach, Fla.) · 2025Review
- Article
- In-sensor compressing via programmable optoelectronic sensors based on van der Waals heterostructures for intelligent machine vision.Nature communications · 2025Article
- Artificial non-monotonic neurons based on nonvolatile anti-ambipolar transistors.Nature communications · 2025Article
Corrections and comments
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Authors and funding
17 authors.
Funding
Abstract
The development of high-performance memory devices has played a key role in the innovation of modern electronics. Non-volatile memory devices have manifested high capacity and mechanical reliability as a mainstream technology; however, their performance has been hampered by low extinction ratio and slow operational speed. Despite substantial efforts to improve these characteristics, typical write times of hundreds of micro- or milliseconds remain a few orders of magnitude longer than that of their volatile counterparts. Here we demonstrate non-volatile, floating-gate memory devices based on van der Waals heterostructures with atomically sharp interfaces between different functional elements, achieving ultrahigh-speed programming/erasing operations in the range of nanoseconds with extinction ratio up to 10
Identifiers
33941919What OpenQuestion holds
Registered trials
Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.