ArticleNanomaterials (Basel, Switzerland)2021
UV Nanoimprint Lithography: Geometrical Impact on Filling Properties of Nanoscale Patterns.
Article in Nanomaterials (Basel, Switzerland), 2021. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 6 papers.
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Who cites it
6 citing papers in PubMed.
- Nanoimprint lithography for scalable electronic and photonic nanomanufacturing.Discover nano · 2026Review
- The Evolution of Lithography: From Resolution Scaling to Manufacturing Constraints.Micromachines · 2026Review
- Pattern Fidelity of Vertically Aligned GaAs Nanowire Arrays.Small (Weinheim an der Bergstrasse, Germany) · 2025Article
- Microfluidics on lensless, semiconductor optical image sensors: challenges and opportunities for democratization of biosensing at the micro-and nano-scale.Nanophotonics (Berlin, Germany) · 2023Review
- Effects of Solvent Additive and Micro-Patterned Substrate on the Properties of Thin Films Based on P3HT:PC70BM Blends Deposited by MAPLE.Materials (Basel, Switzerland) · 2022Article
- Editorial for Special Issue: Nanoimprint Lithography Technology and Applications.Nanomaterials (Basel, Switzerland) · 2021Article
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Authors and funding
2 authors.
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Abstract
Ultraviolet (UV) Nanoimprint Lithography (NIL) is a replication method that is well known for its capability to address a wide range of pattern sizes and shapes. It has proven to be an efficient production method for patterning resist layers with features ranging from a few hundred micrometers and down to the nanometer range. Best results can be achieved if the fundamental behavior of the imprint resist and the pattern filling are considered by the equipment and process parameters. In particular, the material properties and pattern size and shape play a crucial role. For capillary force-driven filling behavior it is important to understand the influencing parameters and respective failure modes in order to optimize the processes for reliable full wafer manufacturing. In this work, the nanoimprint results obtained for different pattern geometries are compared with respect to pattern quality and residual layer thickness: The comprehensive overview of the relevant process parameters is helpful for setting up NIL processes for different nanostructures with minimum layer thickness.
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Registered trials
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