ArticleNanomaterials (Basel, Switzerland)2021
Temperature Dependence of Stress and Optical Properties in AlN Films Grown by MOCVD.
Article in Nanomaterials (Basel, Switzerland), 2021. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 7 papers.
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7 citing papers in PubMed, 36 citations in OpenAlex.
- Spectroscopic Ellipsometry and Correlated Studies of AlGaN-GaN HEMTs Prepared by MOCVD.Nanomaterials (Basel, Switzerland) · 2025Article
- Impact of Temperature and Substrate Type on the Optical and Structural Properties of AlN Epilayers: A Cross-Sectional Analysis Using Advanced Characterization Techniques.Molecules (Basel, Switzerland) · 2024Article
- Optical and Structural Properties of Aluminum Nitride Epi-Films at Room and High Temperature.Materials (Basel, Switzerland) · 2023Article
- Aluminum Nitride Ultraviolet Light-Emitting Device Excited via Carbon Nanotube Field-Emission Electron Beam.Nanomaterials (Basel, Switzerland) · 2023Article
- Structural, Surface and Optical Studies of m- and c-Face AlN Crystals Grown by Physical Vapor Transport Method.Materials (Basel, Switzerland) · 2023Article
- Study of Defects and Nano-patterned Substrate Regulation Mechanism in AlN Epilayers.Nanomaterials (Basel, Switzerland) · 2022Article
- Excellent Bipolar Resistive Switching Characteristics of BiNanomaterials (Basel, Switzerland) · 2021Article
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Authors and funding
8 authors at 2 institutions in 1 country.
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Abstract
AlN epilayers were grown on a 2-inch [0001] conventional flat sapphire substrate (CSS) and a nano-patterned sapphire substrate (NPSS) by metalorganic chemical vapor deposition. In this work, the effect of the substrate template and temperature on stress and optical properties of AlN films has been studied by using Raman spectroscopy, X-ray diffraction (XRD), transmission electron microscopy (TEM), UV-visible spectrophotometer and spectroscopic ellipsometry (SE). The AlN on NPSS exhibits lower compressive stress and strain values. The biaxial stress decreases from 1.59 to 0.60 GPa for AlN on CSS and from 0.90 to 0.38 GPa for AlN on NPSS sample in the temperature range 80-300 K, which shows compressive stress. According to the TEM data, the stress varies from tensile on the interface to compressive on the surface. It can be deduced that the nano-holes provide more channels for stress relaxation. Nano-patterning leads to a lower degree of disorder and stress/strain relaxes by the formation of the nano-hole structure between the interface of AlN epilayers and the substrate. The low crystal disorder and defects in the AlN on NPSS is confirmed by the small Urbach energy values. The variation in bandgap (
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