Luminescence from Droplet-Etched GaAs Quantum Dots at and Close to Room Temperature.

Leonardo Ranasinghe, Christian Heyn, Kristian Deneke, Michael Zocher, Roman Korneev, Wolfgang Hansen

Abstract read

In one paragraph

Article in Nanomaterials (Basel, Switzerland), 2021. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 1 paper.

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1citing papers in PubMed

–field-weighted citation impact

1 · What the graph read from it

What it found

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3 · Its place in the literature

Who cites it

1 citing paper in PubMed.

Temperature-Enhanced Exciton Emission from GaAs Cone-Shell Quantum Dots.Nanomaterials (Basel, Switzerland) · 2023
Article

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5 · Who and what money

Authors and funding

6 authors.

Leonardo RanasingheCenter for Hybrid Nanostructures (CHyN), University of Hamburg, Luruper Chaussee 149, 22761 Hamburg, Germany.

Christian HeynCenter for Hybrid Nanostructures (CHyN), University of Hamburg, Luruper Chaussee 149, 22761 Hamburg, Germany.ORCID 0000-0002-7147-4006

Kristian DenekeCenter for Hybrid Nanostructures (CHyN), University of Hamburg, Luruper Chaussee 149, 22761 Hamburg, Germany.

Michael ZocherCenter for Hybrid Nanostructures (CHyN), University of Hamburg, Luruper Chaussee 149, 22761 Hamburg, Germany.

Roman KorneevCenter for Hybrid Nanostructures (CHyN), University of Hamburg, Luruper Chaussee 149, 22761 Hamburg, Germany.

Wolfgang HansenCenter for Hybrid Nanostructures (CHyN), University of Hamburg, Luruper Chaussee 149, 22761 Hamburg, Germany.

Funding

BMBF Forschungslabor Mikroelektronik Deutschland ForLabDeutsche Forschungsgemeinschaft HE 2466/2-1 and HA 2042/8-1H2020 Marie Skłodowska-Curie Actions 721394

6 · The paper itself

Abstract

Epitaxially grown quantum dots (QDs) are established as quantum emitters for quantum information technology, but their operation under ambient conditions remains a challenge. Therefore, we study photoluminescence (PL) emission at and close to room temperature from self-assembled strain-free GaAs quantum dots (QDs) in refilled AlGaAs nanoholes on (001)GaAs substrate. Two major obstacles for room temperature operation are observed. The first is a strong radiative background from the GaAs substrate and the second a significant loss of intensity by more than four orders of magnitude between liquid helium and room temperature. We discuss results obtained on three different sample designs and two excitation wavelengths. The PL measurements are performed at room temperature and at

Indexed as

droplet etchingnanostructuringphotoluminescencequantum dotroom temperatureself-assemblysemiconductor

Identifiers

PMID33802007

DOI10.3390/nano11030690

PMCPMC8001385

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