ArticleMaterials (Basel, Switzerland)2021
Single Femtosecond Laser-Pulse-Induced Superficial Amorphization and Re-Crystallization of Silicon.
Article in Materials (Basel, Switzerland), 2021. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 8 papers.
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Who cites it
8 citing papers in PubMed, 41 citations in OpenAlex.
- 2D amorphous solids for sub-nanometer scale devices.Nano convergence · 2024Review
- Dynamically patterning x-ray beam by a femtosecond optical laser.Science advances · 2024Article
- Ultrafast Infrared Laser Crystallization of Amorphous Si/Ge Multilayer Structures.Materials (Basel, Switzerland) · 2023Article
- Bonding of PMMA to silicon by femtosecond laser pulses.Scientific reports · 2023Article
- Thermodynamical Analysis of the Formation ofMaterials (Basel, Switzerland) · 2023Article
- Special Issue "Advanced Pulse Laser Machining Technology".Materials (Basel, Switzerland) · 2023Article
- Material Removal Capability and Profile Quality Assessment on Silicon Carbide Micropillar Fabrication with a Femtosecond Laser.Materials (Basel, Switzerland) · 2022Article
- Research on Monocrystalline Silicon Micro-Nano Structures Irradiated by Femtosecond Laser.Materials (Basel, Switzerland) · 2022Article
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Authors and funding
12 authors at 3 institutions in 2 countries.
Funding
Abstract
Superficial amorphization and re-crystallization of silicon in <111> and <100> orientation after irradiation by femtosecond laser pulses (790 nm, 30 fs) are studied using optical imaging and transmission electron microscopy. Spectroscopic imaging ellipsometry (SIE) allows fast data acquisition at multiple wavelengths and provides experimental data for calculating nanometric amorphous layer thickness profiles with micrometric lateral resolution based on a thin-film layer model. For a radially Gaussian laser beam and at moderate peak fluences above the melting and below the ablation thresholds, laterally parabolic amorphous layer profiles with maximum thicknesses of several tens of nanometers were quantitatively attained. The accuracy of the calculations is verified experimentally by high-resolution transmission electron microscopy (HRTEM) and energy dispersive X-ray spectroscopy (STEM-EDX). Along with topographic information obtained by atomic force microscopy (AFM), a comprehensive picture of the superficial re-solidification of silicon after local melting by femtosecond laser pulses is drawn.
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