ArticleMicromachines2021
Effect of Gas Annealing on the Electrical Properties of Ni/AlN/SiC.
Article in Micromachines, 2021. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 3 papers.
What it found
Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.
The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.
The trial behind it
Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.
Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.
Who cites it
3 citing papers in PubMed.
- Doped Magnesium Ferrite Thin Films as Photoanodes for Water Oxidation.Small science · 2026Article
- Editorial for the Special Issue on Wide Bandgap Based Devices: Design, Fabrication and Applications, Volume II.Micromachines · 2022Article
- Effect of High-Temperature Nitridation and Buffer Layer on Semi-Polar (10-13) AlN Grown on Sapphire by HVPE.Micromachines · 2021Article
Corrections and comments
PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.
Authors and funding
3 authors.
Funding
Abstract
It is shown in this work that annealing of Schottky barrier diodes (SBDs) in the form of Ni/AlN/SiC heterojunction devices in an atmosphere of nitrogen and oxygen leads to a significant improvement in the electrical properties of the structures. Compared to the non-annealed device, the on/off ratio of the annealed SBD devices increased by approximately 100 times. The ideality factor, derived from the current-voltage (IV) characterization, decreased by a factor of ~5.1 after annealing, whereas the barrier height increased from ~0.52 to 0.71 eV. The bonding structure of the AlN layer was characterized by X-ray photoelectron spectroscopy. Examination of the N 1 s and O 1 s peaks provided direct indication of the most prevalent chemical bonding states of the elements.
Indexed as
Identifiers
What OpenQuestion holds
Registered trials
Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.