Evidence map›Paper›PMID 33750797›Full record

ArticleNature communications2021

Near-ideal van der Waals rectifiers based on all-two-dimensional Schottky junctions.

Xiankun Zhang, Baishan Liu, Li Gao, Huihui Yu, Xiaozhi Liu, Junli Du, Jiankun Xiao, Yihe Liu, Lin Gu, Qingliang Liao and 3 more

Open access · goldAbstract read
In one paragraph

Article in Nature communications, 2021. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 21 papers.

0numbers the graph read from it
0cells of the map it votes in
21citing papers in PubMed
12.5field-weighted citation impact, top 1% of its field
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

21 citing papers in PubMed, 219 citations in OpenAlex.

  1. Review
  2. Reconfigurable Optoelectronic Logic Gates Enabled by a VSeNanomaterials (Basel, Switzerland) · 2026
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  5. High-Performance KVSmall (Weinheim an der Bergstrasse, Germany) · 2026
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  7. Emerging Device Applications From Strong Light-Matter Interactions in 2D Materials.Advanced science (Weinheim, Baden-Wurttemberg, Germany) · 2026
    Review
  8. Article
  9. Direct Formation of Stable 1T' Molybdenum Telluride (MoTeACS applied materials & interfaces · 2025
    Article
  10. Article
  11. Review
  12. Ultranarrow Semiconductor WSNano letters · 2025
    Article
  13. Layer-dependent Schottky contact at TaXNanoscale advances · 2025
    Article
  14. Article
  15. The Contact Properties of Monolayer and Multilayer MoSNanomaterials (Basel, Switzerland) · 2024
    Article
  16. Asymmetric Schottky Barrier-Generated MoSNanomaterials (Basel, Switzerland) · 2024
    Article
  17. Article
  18. Article
  19. Highly Sensitive MoSACS applied materials & interfaces · 2023
    Article
  20. Article
4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

13 authors at 3 institutions in 1 country.

Xiankun Zhang *Beijing Advanced Innovation Center for Materials Genome Engineering, Beijing Key Laboratory for Advanced Energy Materials and Technologies, University of Science and Technology Beijing, Beijing, People's Republic of China.ORCID http://orcid.org/0000-0001-9654-4659
Baishan Liu *Beijing Advanced Innovation Center for Materials Genome Engineering, Beijing Key Laboratory for Advanced Energy Materials and Technologies, University of Science and Technology Beijing, Beijing, People's Republic of China.
Li GaoBeijing Advanced Innovation Center for Materials Genome Engineering, Beijing Key Laboratory for Advanced Energy Materials and Technologies, University of Science and Technology Beijing, Beijing, People's Republic of China.
Huihui YuBeijing Advanced Innovation Center for Materials Genome Engineering, Beijing Key Laboratory for Advanced Energy Materials and Technologies, University of Science and Technology Beijing, Beijing, People's Republic of China.
Xiaozhi LiuCollaborative Innovation Center of Quantum Matter, Beijing, China.ORCID http://orcid.org/0000-0001-8647-8694
Junli DuBeijing Advanced Innovation Center for Materials Genome Engineering, Beijing Key Laboratory for Advanced Energy Materials and Technologies, University of Science and Technology Beijing, Beijing, People's Republic of China.
Jiankun XiaoBeijing Advanced Innovation Center for Materials Genome Engineering, Beijing Key Laboratory for Advanced Energy Materials and Technologies, University of Science and Technology Beijing, Beijing, People's Republic of China.
Yihe LiuBeijing Advanced Innovation Center for Materials Genome Engineering, Beijing Key Laboratory for Advanced Energy Materials and Technologies, University of Science and Technology Beijing, Beijing, People's Republic of China.
Lin GuCollaborative Innovation Center of Quantum Matter, Beijing, China.ORCID http://orcid.org/0000-0002-7504-031X
Qingliang LiaoBeijing Advanced Innovation Center for Materials Genome Engineering, Beijing Key Laboratory for Advanced Energy Materials and Technologies, University of Science and Technology Beijing, Beijing, People's Republic of China.
Zhuo KangBeijing Advanced Innovation Center for Materials Genome Engineering, Beijing Key Laboratory for Advanced Energy Materials and Technologies, University of Science and Technology Beijing, Beijing, People's Republic of China.
Zheng ZhangBeijing Advanced Innovation Center for Materials Genome Engineering, Beijing Key Laboratory for Advanced Energy Materials and Technologies, University of Science and Technology Beijing, Beijing, People's Republic of China. zhengzhang@ustb.edu.cn.
Yue ZhangBeijing Advanced Innovation Center for Materials Genome Engineering, Beijing Key Laboratory for Advanced Energy Materials and Technologies, University of Science and Technology Beijing, Beijing, People's Republic of China. yuezhang@ustb.edu.cn.ORCID http://orcid.org/0000-0002-8213-1420
University of Science and Technology Beijing · CNBeijing Advanced Sciences and Innovation Center · CNChinese Academy of Sciences · CN

Funding

National Natural Science Foundation of China (National Science Foundation of China) 51991340, 51991342, 51972022, 51722203, 51672026
6 · The paper itself

Abstract

The applications of any two-dimensional (2D) semiconductor devices cannot bypass the control of metal-semiconductor interfaces, which can be severely affected by complex Fermi pinning effects and defect states. Here, we report a near-ideal rectifier in the all-2D Schottky junctions composed of the 2D metal 1 T'-MoTe

Identifiers

PMID33750797
PMCPMC7943806
OpenAlexW3134958305

What OpenQuestion holds

Textmetadata
LicenceCC BY
Read underepoch 390

Registered trials

None linked

Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.