A scheme for enabling the ultimate speed of threshold switching in phase change memory devices.

Nishant Saxena, Rajamani Raghunathan, Anbarasu Manivannan

Open access · goldAbstract read

In one paragraph

Article in Scientific reports, 2021. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.

0numbers the graph read from it

0cells of the map it votes in

0citing papers in PubMed

0.5field-weighted citation impact, top 45% of its field

1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

0 citing papers in PubMed, 13 citations in OpenAlex.

No citing paper in PubMed yet.

4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

3 authors at 2 institutions in 1 country.

Nishant SaxenaPhase Change Memory Lab, Advanced Memory and Computing Group, Department of Electrical Engineering, Indian Institute of Technology Madras, Chennai, 600036, India.

Rajamani RaghunathanUGC-DAE Consortium for Scientific Research, DAVV Campus, Khandwa Road, Indore, Madhya Pradesh, 452001, India.

Anbarasu ManivannanPhase Change Memory Lab, Advanced Memory and Computing Group, Department of Electrical Engineering, Indian Institute of Technology Madras, Chennai, 600036, India. anbarasu@iitm.ac.in.

Indian Institute of Technology Madras · INUGC DAE Consortium for Scientific Research · IN

Funding

Science and Engineering Research Board EEQ/2017/000638

6 · The paper itself

Abstract

Phase change materials exhibit threshold switching (TS) that establishes electrical conduction through amorphous material followed by Joule heating leading to its crystallization (set). However, achieving picosecond TS is one of the key challenges for realizing non-volatile memory operations closer to the speed of computing. Here, we present a trajectory map for enabling picosecond TS on the basis of exhaustive experimental results of voltage-dependent transient characteristics of Ge

Identifiers

PMID33731824

DOI10.1038/s41598-021-85690-9

PMCPMC7969762

OpenAlexW3136110140

What OpenQuestion holds

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LicenceCC BY

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Registered trials

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Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.