ArticleNanomaterials (Basel, Switzerland)2021
Fermi-Level Tuning of G-Doped Layers.
Article in Nanomaterials (Basel, Switzerland), 2021. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 5 papers.
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5 citing papers in PubMed.
- Nanograting p-n Junctions with Enhanced Charge Confinement.Nanomaterials (Basel, Switzerland) · 2024Article
- Modified 3D Graphene for Sensing and Electrochemical Capacitor Applications.Nanomaterials (Basel, Switzerland) · 2024Article
- Fabrication of near-invisible solar cell with monolayer WSScientific reports · 2022Article
- Studies on Electron Escape Condition in Semiconductor Nanomaterials via Photodeposition Reaction.Materials (Basel, Switzerland) · 2022Article
- LIPSS Applied to Wide Bandgap Semiconductors and Dielectrics: Assessment and Future Perspectives.Materials (Basel, Switzerland) · 2022Article
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4 authors.
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Abstract
Recently, geometry-induced quantum effects were observed in periodic nanostructures. Nanograting (NG) geometry significantly affects the electronic, magnetic, and optical properties of semiconductor layers. Silicon NG layers exhibit geometry-induced doping. In this study, G-doped junctions were fabricated and characterized and the Fermi-level tuning of the G-doped layers by changing the NG depth was investigated. Samples with various indent depths were fabricated using laser interference lithography and a consecutive series of reactive ion etching. Four adjacent areas with NG depths of 10, 20, 30, and 40 nm were prepared on the same chip. A Kelvin probe was used to map the work function and determine the Fermi level of the samples. The G-doping-induced Fermi-level increase was recorded for eight sample sets cut separately from p-, n-, p
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