ArticleMicromachines2021
Study on the Stability of the Electrical Connection of High-Temperature Pressure Sensor Based on the Piezoresistive Effect of P-Type SiC.
Article in Micromachines, 2021. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 5 papers.
What it found
Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.
The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.
The trial behind it
Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.
Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.
Who cites it
5 citing papers in PubMed.
- Performance Evolution and Research Progress of Silicon Carbide Sensors in Radiation Environments: A Review.Micromachines · 2026Review
- Advances in silicon carbide pressure sensors for high-temperature extreme environment sensing.Microsystems & nanoengineering · 2026Review
- A Review of SiC Sensor Applications in High-Temperature and Radiation Extreme Environments.Sensors (Basel, Switzerland) · 2024Review
- Femtosecond Laser Processing Assisted SiC High-Temperature Pressure Sensor Fabrication and Performance Test.Micromachines · 2023Article
- Exploring the nonlinear piezoresistive effect of 4H-SiC and developing MEMS pressure sensors for extreme environments.Microsystems & nanoengineering · 2023Article
Corrections and comments
PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.
Authors and funding
7 authors.
Funding
Abstract
In this study, a preparation method for the high-temperature pressure sensor based on the piezoresistive effect of p-type SiC is presented. The varistor with a positive trapezoidal shape was designed and etched innovatively to improve the contact stability between the metal and SiC varistor. Additionally, the excellent ohmic contact was formed by annealing at 950 °C between Ni/Al/Ni/Au and p-type SiC with a doping concentration of 10
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Registered trials
Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.