ArticleACS omega2021
Enhancing Structural Properties and Performance of Graphene-Based Devices Using Self-Assembled HMDS Monolayers.
Article in ACS omega, 2021. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 10 papers.
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Who cites it
10 citing papers in PubMed.
- Wafer-scale robust graphene electronics under industrial processing conditions.Chemical communications (Cambridge, England) · 2026Article
- Ultrasensitive Detection of Neurofilament Light in Plasma Using F(Ab')Small (Weinheim an der Bergstrasse, Germany) · 2026Article
- Substrate-Tight Graphene Transmembrane-nanofluidic Devices.Small (Weinheim an der Bergstrasse, Germany) · 2026Article
- Large-Area Electrodeposited WSeACS applied nano materials · 2025Article
- Analysis of plasmon modes in BiScientific reports · 2024Article
- Selective Laser-Assisted Direct Synthesis of MoSNanomaterials (Basel, Switzerland) · 2023Article
- Toward Fabrication of Devices Based on Graphene/Oxide Multilayers.ACS applied electronic materials · 2023Article
- The New Materials for Battery Electrode Prototypes.Materials (Basel, Switzerland) · 2023Article
- On-chip integrated graphene aptasensor with portable readout for fast and label-free COVID-19 detection in virus transport medium.Sensors & diagnostics · 2022Article
- Application of Molecular Vapour Deposited AlNanomaterials (Basel, Switzerland) · 2021Article
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Authors and funding
9 authors.
Funding
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Abstract
The performance of graphene devices is often limited by defects and impurities induced during device fabrication. Polymer residue left on the surface of graphene after photoresist processing can increase electron scattering and hinder electron transport. Furthermore, exposing graphene to plasma-based processing such as sputtering of metallization layers can increase the defect density in graphene and alter the device performance. Therefore, the preservation of the high-quality surface of graphene during thin-film deposition and device manufacturing is essential for many electronic applications. Here, we show that the use of self-assembled monolayers (SAMs) of hexamethyldisilazane (HMDS) as a buffer layer during the device fabrication of graphene can significantly reduce damage, improve the quality of graphene, and enhance device performance. The role of HMDS has been systematically investigated using surface analysis techniques and electrical measurements. The benefits of HMDS treatment include a significant reduction in defect density compared with as-treated graphene and more than a 2-fold reduction of contact resistance. This surface treatment is simple and offers a practical route for improving graphene device interfaces, which is important for the integration of graphene into functional devices such as electronics and sensor devices.
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Registered trials
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