ArticleMaterials (Basel, Switzerland)2021
Influence of Gas Annealing on Sensitivity of AlN/4H-Sic-Based Temperature Sensors.
Article in Materials (Basel, Switzerland), 2021. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 4 papers.
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The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.
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Who cites it
4 citing papers in PubMed, 10 citations in OpenAlex.
- Highly Sensitive and Selective Defect WSSensors (Basel, Switzerland) · 2024Article
- Epitaxy of (11-22) AlN Films on a Sputtered Buffer Layer with Different Annealing Temperatures via Hydride Vapour Phase Epitaxy.Materials (Basel, Switzerland) · 2024Article
- Amorphous BN-Based Synaptic Device with High Performance in Neuromorphic Computing.Materials (Basel, Switzerland) · 2023Article
- Effect of Gas Annealing on the Electrical Properties of Ni/AlN/SiC.Micromachines · 2021Article
Corrections and comments
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Authors and funding
5 authors at 1 institution in 2 countries.
Funding
Abstract
In this study, the physical and electrical characteristics of an AlN/4H-SiC Schottky barrier diode-based temperature sensor annealed in various gas atmospheres were investigated. An aluminum nitride (AlN) thin film was deposited on a 4H-SiC substrate via radio-frequency sputtering followed by annealing in N
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Registered trials
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