Evidence map›Paper›PMID 33535529›Full record

ArticleNanomaterials (Basel, Switzerland)2021

Stable and Multilevel Data Storage Resistive Switching of Organic Bulk Heterojunction.

Harshada Patil, Honggyun Kim, Shania Rehman, Kalyani D Kadam, Jamal Aziz, Muhammad Farooq Khan, Deok-Kee Kim

Abstract read
In one paragraph

Article in Nanomaterials (Basel, Switzerland), 2021. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 7 papers.

0numbers the graph read from it
0cells of the map it votes in
7citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

7 citing papers in PubMed.

  1. Review
  2. Article
  3. Multilevel Reset Dependent Set of a Biodegradable Memristor with Physically Transient.Advanced science (Weinheim, Baden-Wurttemberg, Germany) · 2024
    Article
  4. Review
  5. Article
  6. Stable Resistive Switching in ZnO/PVA:MoSNanomaterials (Basel, Switzerland) · 2022
    Article
  7. Article
4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

7 authors.

Harshada PatilDepartment of Electrical Engineering, Sejong University, 209 Neungdong-ro, Gwangjin-gu, Seoul 05006, Korea.
Honggyun KimDepartment of Electrical Engineering, Sejong University, 209 Neungdong-ro, Gwangjin-gu, Seoul 05006, Korea.
Shania RehmanDepartment of Electrical Engineering, Sejong University, 209 Neungdong-ro, Gwangjin-gu, Seoul 05006, Korea.
Kalyani D KadamDepartment of Electrical Engineering, Sejong University, 209 Neungdong-ro, Gwangjin-gu, Seoul 05006, Korea.
Jamal AzizDepartment of Electrical Engineering, Sejong University, 209 Neungdong-ro, Gwangjin-gu, Seoul 05006, Korea.
Muhammad Farooq KhanDepartment of Electrical Engineering, Sejong University, 209 Neungdong-ro, Gwangjin-gu, Seoul 05006, Korea.
Deok-Kee KimDepartment of Electrical Engineering, Sejong University, 209 Neungdong-ro, Gwangjin-gu, Seoul 05006, Korea.ORCID 0000-0002-2515-4984

Funding

No grant is acknowledged in the PubMed record.

6 · The paper itself

Abstract

Organic nonvolatile memory devices have a vital role for the next generation of electrical memory units, due to their large scalability and low-cost fabrication techniques. Here, we show bipolar resistive switching based on an Ag/ZnO/P3HT-PCBM/ITO device in which P3HT-PCBM acts as an organic heterojunction with inorganic ZnO protective layer. The prepared memory device has consistent DC endurance (500 cycles), retention properties (10

Indexed as

filament formationmultilevel resistive switchingP3HT-PCBMsolution-processed

Identifiers

PMID33535529
PMCPMC7912748

What OpenQuestion holds

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Registered trials

None linked

Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.