ArticleNanoscale research letters2021
ZrO
Siqing Zhang, Huan Liu, Jiuren Zhou, Yan Liu, Genquan Han, Yue Hao
Abstract read
In one paragraphArticle in Nanoscale research letters, 2021. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.
0numbers the graph read from it
0cells of the map it votes in
0citing papers in PubMed
–field-weighted citation impact
What it found
Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.
The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.
2 · The registryThe trial behind it
Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.
Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.
3 · Its place in the literatureWho cites it
0 citing papers in PubMed.
No citing paper in PubMed yet.
4 · The recordCorrections and comments
PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.
5 · Who and what moneyAuthors and funding
6 authors.
Siqing Zhang *State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an, 710071, China.
Huan Liu *State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an, 710071, China.
Jiuren ZhouState Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an, 710071, China.
Yan LiuState Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an, 710071, China. xdliuyan@xidian.edu.cn.ORCID http://orcid.org/0000-0003-4724-6588 Genquan HanState Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an, 710071, China.
Yue HaoState Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an, 710071, China.
Funding
the National Key Research and Development Project 2018YFB2200500the National Key Research and Development Project 2018YFB2202800the National Natural Science Foundation of China 61851406the National Natural Science Foundation of China 61874081the National Natural Science Foundation of China 62004145the National Natural Science Foundation of China 62004149the National Natural Science Foundation of China 62025402the National Natural Science Foundation of China 62090033the National Natural Science Foundation of China 91964202the National Natural Science Foundation of China 92064003
6 · The paper itselfAbstract
Indexed as
Amorphous ZrOxFerroelectricFETNegative capacitanceSubthreshold swing
Identifiers
PMID33532927
PMCPMC7855158
What OpenQuestion holds
Textmetadata
LicenceCC BY
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