ArticleNanomaterials (Basel, Switzerland)2021
Bipolar and Complementary Resistive Switching Characteristics and Neuromorphic System Simulation in a Pt/ZnO/TiN Synaptic Device.
Article in Nanomaterials (Basel, Switzerland), 2021. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 8 papers.
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Who cites it
8 citing papers in PubMed.
- Transparent Zinc Oxide Memristor Structures: Magnetron Sputtering of Thin Films, Resistive Switching Investigation, and Crossbar Array Fabrication.Nanomaterials (Basel, Switzerland) · 2024Article
- SnONanomaterials (Basel, Switzerland) · 2023Article
- Effects of Top and Bottom Electrodes Materials and Operating Ambiance on the Characteristics of MgFNanomaterials (Basel, Switzerland) · 2023Article
- Transition from synaptic simulation to nonvolatile resistive switching behavior based on an Ag/Ag:ZnO/Pt memristor.RSC advances · 2022Article
- Resistive Switching Characteristics of Alloyed AlSiOMaterials (Basel, Switzerland) · 2022Article
- Multi-level Cells and Quantized Conductance Characteristics of AlNanoscale research letters · 2022Article
- Resistive Switching and Synaptic Characteristics in ZnO/TaON-Based RRAM for Neuromorphic System.Nanomaterials (Basel, Switzerland) · 2022Article
- Stable Resistive Switching in ZnO/PVA:MoSNanomaterials (Basel, Switzerland) · 2022Article
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Authors and funding
6 authors.
Funding
Abstract
In this work, a ZnO-based resistive switching memory device is characterized by using simplified electrical conduction models. The conventional bipolar resistive switching and complementary resistive switching modes are accomplished by tuning the bias voltage condition. The material and chemical information of the device stack including the interfacial layer of TiON is well confirmed by transmission electron microscopy (TEM) and X-ray photoelectron spectroscopy (XPS) analysis. The device exhibits uniform gradual bipolar resistive switching (BRS) with good endurance and self-compliance characteristics. Moreover, complementary resistive switching (CRS) is achieved by applying the compliance current at negative bias and increasing the voltage at positive bias. The synaptic behaviors such as long-term potentiation and long-term depression are emulated by applying consecutive pulse input to the device. The CRS mode has a higher array size in the cross-point array structure than the BRS mode due to more nonlinear I-V characteristics in the CRS mode. However, we reveal that the BRS mode shows a better pattern recognition rate than the CRS mode due to more uniform conductance update.
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