Evidence map›Paper›PMID 33499221›Full record

ArticleMicromachines2021

Bias Stress Stability of Solution-Processed Nano Indium Oxide Thin Film Transistor.

Rihui Yao, Xiao Fu, Wanwan Li, Shangxiong Zhou, Honglong Ning, Biao Tang, Jinglin Wei, Xiuhua Cao, Wei Xu, Junbiao Peng

Abstract read
In one paragraph

Article in Micromachines, 2021. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 2 papers.

0numbers the graph read from it
0cells of the map it votes in
2citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

2 citing papers in PubMed.

  1. Article
  2. Article
4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

10 authors.

Rihui YaoState Key Laboratory of Luminescent Materials and Devices, Institute of Polymer Optoelectronic Materials and Devices, South China University of Technology, Guangzhou 510640, China.ORCID 0000-0002-1362-1784
Xiao FuState Key Laboratory of Luminescent Materials and Devices, Institute of Polymer Optoelectronic Materials and Devices, South China University of Technology, Guangzhou 510640, China.
Wanwan LiState Key Laboratory of Luminescent Materials and Devices, Institute of Polymer Optoelectronic Materials and Devices, South China University of Technology, Guangzhou 510640, China.
Shangxiong ZhouState Key Laboratory of Luminescent Materials and Devices, Institute of Polymer Optoelectronic Materials and Devices, South China University of Technology, Guangzhou 510640, China.
Honglong NingState Key Laboratory of Luminescent Materials and Devices, Institute of Polymer Optoelectronic Materials and Devices, South China University of Technology, Guangzhou 510640, China.ORCID 0000-0001-9518-5738
Biao TangGuangdong Provincial Key Laboratory of Optical Information Materials and Technology & Institute of Electronic Paper Displays, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, China.
Jinglin WeiState Key Laboratory of Luminescent Materials and Devices, Institute of Polymer Optoelectronic Materials and Devices, South China University of Technology, Guangzhou 510640, China.
Xiuhua CaoState Key Laboratory of Advanced Materials and Electronic Components, Fenghua Electronic Industrial Park, No. 18 Fenghua Road, Zhaoqing 526020, China.
Wei XuState Key Laboratory of Luminescent Materials and Devices, Institute of Polymer Optoelectronic Materials and Devices, South China University of Technology, Guangzhou 510640, China.
Junbiao PengState Key Laboratory of Luminescent Materials and Devices, Institute of Polymer Optoelectronic Materials and Devices, South China University of Technology, Guangzhou 510640, China.

Funding

Fundamental Research Funds for the Central Universities No. 2020ZYGXZR060 and 2019MS012Guangdong Major Project of Basic and Applied Basic Research No.2019B030302007Guangdong Natural Science Foundation No.2018A0303130211Ji Hua Laboratory scientific research project X190221TF191Key-Area Research and Development Program of Guangdong Province No.2020B010183002National Natural Science Foundation of China No.51771074 and 62074059Sail Plan Special Innovative Entrepreneurial Teams in Guangdong Province 2015YT02C093the Guangdong Provincial Key Laboratory of Optical Information Materials and Technology 2017B030301007
6 · The paper itself

Abstract

In this paper, the effects of annealing temperature and other process parameters on spin-coated indium oxide thin film transistors (In

Indexed as

annealing temperaturebias stabilityindium oxide thin filmplasma surface treatmentsolution method

Identifiers

PMID33499221
PMCPMC7911419

What OpenQuestion holds

Textmetadata
LicenceCC BY
Read underepoch 390

Registered trials

None linked

Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.