Evidence map›Paper›PMID 33492947›Full record

ArticleACS applied materials & interfaces2021

Gallium-Enhanced Aluminum and Copper Electromigration Performance for Flexible Electronics.

Saeedeh Ravandi, Alexey Minenkov, Cezarina Cela Mardare, Jan Philipp Kollender, Heiko Groiss, Achim Walter Hassel, Andrei Ionut Mardare

Abstract read
In one paragraph

Article in ACS applied materials & interfaces, 2021. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 1 paper.

0numbers the graph read from it
0cells of the map it votes in
1citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

1 citing paper in PubMed.

  1. Article
4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

7 authors.

Saeedeh RavandiInstitute of Chemical Technology of Inorganic Materials, Johannes Kepler University Linz, Altenberger Str. 69, 4040 Linz, Austria.
Alexey MinenkovChristian Doppler Laboratory for Nanoscale Phase Transformations, Center of Surface and Nanoanalytics, Johannes Kepler University Linz, Altenberger Str. 69, 4040 Linz, Austria.ORCID http://orcid.org/0000-0002-6791-3344
Cezarina Cela MardareInstitute of Chemical Technology of Inorganic Materials, Johannes Kepler University Linz, Altenberger Str. 69, 4040 Linz, Austria.ORCID http://orcid.org/0000-0001-8930-1560
Jan Philipp KollenderInstitute of Chemical Technology of Inorganic Materials, Johannes Kepler University Linz, Altenberger Str. 69, 4040 Linz, Austria.
Heiko GroissChristian Doppler Laboratory for Nanoscale Phase Transformations, Center of Surface and Nanoanalytics, Johannes Kepler University Linz, Altenberger Str. 69, 4040 Linz, Austria.
Achim Walter HasselInstitute of Chemical Technology of Inorganic Materials, Johannes Kepler University Linz, Altenberger Str. 69, 4040 Linz, Austria.ORCID http://orcid.org/0000-0002-9816-6740
Andrei Ionut MardareInstitute of Chemical Technology of Inorganic Materials, Johannes Kepler University Linz, Altenberger Str. 69, 4040 Linz, Austria.ORCID http://orcid.org/0000-0003-4137-1994

Funding

No grant is acknowledged in the PubMed record.

6 · The paper itself

Abstract

Wide range binary and ternary thin film combinatorial libraries mixing Al, Cu, and Ga were screened for identifying alloys with enhanced ability to withstand electromigration. Bidimensional test wires were obtained by lithographically patterning the substrates before simultaneous vacuum co-deposition from independent sources. Current-voltage measurement automation allowed for high throughput experimentation, revealing the maximum current density and voltage at the electrical failure threshold for each alloy. The grain boundary dynamic during electromigration is attributed to the resultant between the force corresponding to the electron flux density and the one corresponding to the atomic concentration gradient perpendicular to the current flow direction. The screening identifies Al-8 at. % Ga and Cu-5 at. % Ga for replacing pure Al or Cu connecting lines in high current/power electronics. Both alloys were deposited on polyethylene naphthalate (PEN) flexible substrates. The film adhesion to PEN is enhanced by alloying Al or Cu with Ga. Electrical testing demonstrated that Al-8 at. % Ga is more suitable for conducting lines in flexible electronics, showing an almost 50% increase in electromigration suppression when compared to pure Al. Moreover, Cu-5 at. % Ga showed superior properties as compared to pure Cu on both SiO

Indexed as

combinatorial librariesflexible electronicshigh throughput screeninglow resistance alloysmetallic thin films

Identifiers

PMID33492947
PMCPMC7883345

What OpenQuestion holds

Textmetadata
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Registered trials

None linked

Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.