Back-Gate GaN Nanowire-Based FET Device for Enhancing Gas Selectivity at Room Temperature.

Md Ashfaque Hossain Khan, Ratan Debnath, Abhishek Motayed, Mulpuri V Rao

Abstract read

In one paragraph

Article in Sensors (Basel, Switzerland), 2021. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 2 papers.

0numbers the graph read from it

0cells of the map it votes in

2citing papers in PubMed

–field-weighted citation impact

1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

2 citing papers in PubMed.

Synthesis, Structural and Magnetic Properties of Cobalt-Doped GaN Nanowires on Si by Atmospheric Pressure Chemical Vapor Deposition.Materials (Basel, Switzerland) · 2022
Article
Gate-controlled gas sensor utilizing 1D-2D hybrid nanowires network.iScience · 2022
Article

4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

4 authors.

Md Ashfaque Hossain KhanDepartment of Electrical and Computer Engineering, George Mason University, Fairfax, VA 22030, USA.ORCID 0000-0002-0070-8872

Ratan DebnathN5 Sensors, Inc., Rockville, MD 20850, USA.

Abhishek MotayedN5 Sensors, Inc., Rockville, MD 20850, USA.

Mulpuri V RaoDepartment of Electrical and Computer Engineering, George Mason University, Fairfax, VA 22030, USA.

Funding

N5 Sensors Inc. Internal FundingNational science foundation ECCS1840712

6 · The paper itself

Abstract

In this work, a TiO

Indexed as

back-gate FETcross-sensitivitygallium nitride (GaN)gas sensormetal oxide

Identifiers

PMID33477377

DOI10.3390/s21020624

PMCPMC7830633

What OpenQuestion holds

Textmetadata

LicenceCC BY

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Registered trials

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Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.