Evidence map›Paper›PMID 33475892›Full record

ArticleNanoscale research letters2021

Photoelectronic Properties of End-bonded InAsSb Nanowire Array Detector under Weak Light.

Xiaomei Yao, Xutao Zhang, Tingting Kang, Zhiyong Song, Qiang Sun, Dongdong Wei, Jin Zou, Pingping Chen

Abstract read
In one paragraph

Article in Nanoscale research letters, 2021. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.

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0citing papers in PubMed
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1 · What the graph read from it

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The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

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3 · Its place in the literature

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4 · The record

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5 · Who and what money

Authors and funding

8 authors.

Xiaomei YaoState Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics Chinese Academy of Sciences, Shanghai, 200083, China.
Xutao ZhangState Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics Chinese Academy of Sciences, Shanghai, 200083, China. xtzhang@nwpu.edu.cn.
Tingting KangState Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics Chinese Academy of Sciences, Shanghai, 200083, China.
Zhiyong SongState Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics Chinese Academy of Sciences, Shanghai, 200083, China.
Qiang SunMaterials Engineering, The University of Queensland, Brisbane, QLD, 4072, Australia.
Dongdong WeiState Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics Chinese Academy of Sciences, Shanghai, 200083, China.
Jin ZouMaterials Engineering, The University of Queensland, Brisbane, QLD, 4072, Australia.
Pingping ChenState Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics Chinese Academy of Sciences, Shanghai, 200083, China. ppchen@mail.sitp.ac.cn.

Funding

National Natural Science Foundation of China 11634009National Natural Science Foundation of China 11774016National Natural Science Foundation of China 11991062National Natural Science Foundation of China 11991063National Natural Science Foundation of China 62005222Natural Science Foundation of Shaanxi Province 2020JQ-222Postdoctoral Research Foundation of China 2020M683548Shanghai Municipal Science and Technology Major Project 2019SHZDZX01
6 · The paper itself

Abstract

A simple fabrication of end-bonded contacts InAsSb NW (nanowire) array detector to weak light is demonstrated in this study. The detector is fabricated using InAsSb NW array grown by molecular beam epitaxy on GaAs substrate. The metal-induced gap states are induced by the end-bonded contact which suppresses the dark current at various temperatures. The existence of the interface dipole due to the interfacial gap states enhances the light excitation around the local field and thus upgrades the photoresponsivity and photodetectivity to the weak light. The light intensity of the infrared light source in this report is 14 nW/cm

Indexed as

InAsSbNWPhotodetectorRoom temperatureWeak light

Identifiers

PMID33475892
PMCPMC7818373

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