ArticleLight, science & applications2021
Band-structure-engineered high-gain LWIR photodetector based on a type-II superlattice.
Article in Light, science & applications, 2021. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 8 papers.
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Who cites it
8 citing papers in PubMed.
- PRISM: Feature-Guided Hierarchical Inpainting for Dual-Band Infrared Defective Pixel Clusters.Sensors (Basel, Switzerland) · 2026Article
- Mid-Infrared Sensing and Ultrafast Photoresponse in Silicon-Based Plasmonic Detectors.ACS photonics · 2026Article
- Convergence of Thermistor Materials and Focal Plane Arrays in Uncooled Microbolometers: Trends and Perspectives.Nanomaterials (Basel, Switzerland) · 2025Review
- Superlattice Engineering on 2D BiAdvanced science (Weinheim, Baden-Wurttemberg, Germany) · 2025Article
- Enhanced performance of T2SLs LWIR avalanche photodiodes with a separate AlxGa1-xSb multiplication layer.Scientific reports · 2025Article
- Organic photodiodes: device engineering and applications.Frontiers of optoelectronics · 2022Review
- Ensemble GaAsSb/GaAs axial configured nanowire-based separate absorption, charge, and multiplication avalanche near-infrared photodetectors.Nanoscale advances · 2022Article
- Breaking the Cut-Off Wavelength Limit of GaTe through Self-Driven Oxygen Intercalation in Air.Advanced science (Weinheim, Baden-Wurttemberg, Germany) · 2022Article
Corrections and comments
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Authors and funding
3 authors.
Funding
Abstract
The LWIR and longer wavelength regions are of particular interest for new developments and new approaches to realizing long-wavelength infrared (LWIR) photodetectors with high detectivity and high responsivity. These photodetectors are highly desirable for applications such as infrared earth science and astronomy, remote sensing, optical communication, and thermal and medical imaging. Here, we report the design, growth, and characterization of a high-gain band-structure-engineered LWIR heterojunction phototransistor based on type-II superlattices. The 1/e cut-off wavelength of the device is 8.0 µm. At 77 K, unity optical gain occurs at a 90 mV applied bias with a dark current density of 3.2 × 10
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Registered trials
Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.