Evidence map›Paper›PMID 33434239›Full record

ArticlePloS one2021

SiOxNy back-contact barriers for CZTSe thin-film solar cells.

Wenjian Chen, Hippolyte Hirwa, Jörg Ohland, Teoman Taskesen, Ulf Mikolajczak, Devendra Pareek, Jürgen Parisi, Levent Gütay

Abstract read
PubMed Full text at PMC Publisher
In one paragraph

Article in PloS one, 2021. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.

0numbers the graph read from it
0cells of the map it votes in
0citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

0 citing papers in PubMed.

No citing paper in PubMed yet.

4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

8 authors.

Wenjian ChenLaboratory for Chalcogenide Photovoltaics, Energy and Semiconductor Research Laboratory, Institute of Physics, Carl von Ossietzky University of Oldenburg, Oldenburg, Lower Saxony, Germany.ORCID 0000-0003-1310-8611
Hippolyte HirwaLaboratory for Chalcogenide Photovoltaics, Energy and Semiconductor Research Laboratory, Institute of Physics, Carl von Ossietzky University of Oldenburg, Oldenburg, Lower Saxony, Germany.
Jörg OhlandLaboratory for Chalcogenide Photovoltaics, Energy and Semiconductor Research Laboratory, Institute of Physics, Carl von Ossietzky University of Oldenburg, Oldenburg, Lower Saxony, Germany.
Teoman TaskesenLaboratory for Chalcogenide Photovoltaics, Energy and Semiconductor Research Laboratory, Institute of Physics, Carl von Ossietzky University of Oldenburg, Oldenburg, Lower Saxony, Germany.
Ulf MikolajczakLaboratory for Chalcogenide Photovoltaics, Energy and Semiconductor Research Laboratory, Institute of Physics, Carl von Ossietzky University of Oldenburg, Oldenburg, Lower Saxony, Germany.
Devendra PareekLaboratory for Chalcogenide Photovoltaics, Energy and Semiconductor Research Laboratory, Institute of Physics, Carl von Ossietzky University of Oldenburg, Oldenburg, Lower Saxony, Germany.ORCID 0000-0001-7231-6686
Jürgen ParisiLaboratory for Chalcogenide Photovoltaics, Energy and Semiconductor Research Laboratory, Institute of Physics, Carl von Ossietzky University of Oldenburg, Oldenburg, Lower Saxony, Germany.
Levent GütayLaboratory for Chalcogenide Photovoltaics, Energy and Semiconductor Research Laboratory, Institute of Physics, Carl von Ossietzky University of Oldenburg, Oldenburg, Lower Saxony, Germany.

Funding

No grant is acknowledged in the PubMed record.

6 · The paper itself

Abstract

The formation of molybdenum diselenide (MoSe2) is widely observed at the back-contact interface for copper zinc tin selenide (CZTSe) thin-film solar cells. Depending on individual selenium (Se) supply and thermal conditions for forming CZTSe absorbers on molybdenum (Mo) substrates, the thickness of MoSe2 can vary from a few hundreds of nanometers up to ≈ 1 μm, which is comparable to the commonly adopted thickness of 1 ~ 1.5 μm for CZTSe absorbers. In this study, for controlling the thickness of interfacial MoSe2, thin diffusion barrier layers of silicon oxynitride (SiOxNy) are deposited onto Mo layers prior to the growth of CZTSe absorbers in the fabrication process. As a result, a reduction in the thicknesses of MoSe2 layers is achieved. In terms of energy conversion efficiency (η), CZTSe solar cells grown on Mo/SiOxNy back contacts suffer a deterioration as the SiOxNy layers get thicker. CZTSe solar cells grown on Mo/SiOxNy/Mo back contacts preserve their efficiencies at ≈ 11% with thin 10 nm SiOxNy layers.

Indexed as

Solar EnergyAdsorptionCopperMolybdenumSeleniumSelenium CompoundsSilicon CompoundsTinZinc CompoundsCopperMolybdenumSeleniumSelenium CompoundsSilicon CompoundsTinZinc Compoundszinc selenide

Identifiers

PMID33434239
PMCPMC7802926

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Registered trials

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Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.