ArticleNanomaterials (Basel, Switzerland)2021
Exceedingly High Performance Top-Gate P-Type SnO Thin Film Transistor with a Nanometer Scale Channel Layer.
Article in Nanomaterials (Basel, Switzerland), 2021. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 7 papers.
What it found
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The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.
The trial behind it
Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.
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Who cites it
7 citing papers in PubMed, 22 citations in OpenAlex.
- SnO Nanosheet Transistor with Remarkably High Hole Effective Mobility and More than Six Orders of Magnitude On-Current/Off-Current.Nanomaterials (Basel, Switzerland) · 2025Article
- High-Mobility Tellurium Thin-Film Transistor: Oxygen Scavenger Effect Induced by a Metal-Capping Layer.Nanomaterials (Basel, Switzerland) · 2025Article
- Impact of UV annealing on the hole effective mobility in SnO pFET.Scientific reports · 2024Article
- Research Progress of p-Type Oxide Thin-Film Transistors.Materials (Basel, Switzerland) · 2022Review
- Remarkably High-Performance Nanosheet GeSn Thin-Film Transistor.Nanomaterials (Basel, Switzerland) · 2022Article
- Oxygen Concentration Effect on Conductive Bridge Random Access Memory of InWZnO Thin Film.Nanomaterials (Basel, Switzerland) · 2021Article
- Improved Device Distribution in High-Performance SiNNanomaterials (Basel, Switzerland) · 2021Article
Corrections and comments
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Authors and funding
3 authors at 2 institutions in 2 countries.
Funding
Abstract
Implementing high-performance n- and p-type thin-film transistors (TFTs) for monolithic three-dimensional (3D) integrated circuit (IC) and low-DC-power display is crucial. To achieve these goals, a top-gate transistor is preferred to a conventional bottom-gate structure. However, achieving high-performance top-gate p-TFT with good hole field-effect mobility (
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Registered trials
Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.