ReviewNanomaterials (Basel, Switzerland)2021
Atomic-Scale Characterization of Droplet Epitaxy Quantum Dots.
Review in Nanomaterials (Basel, Switzerland), 2021. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 6 papers.
What it found
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Who cites it
6 citing papers in PubMed.
- Site-control of InAs quantum dots on InP by droplet epitaxy in MOVPE.Npj nanophotonics · 2026Article
- Hard Magnetic Properties and the Features of Nanostructure of High-Temperature Sm-Co-Fe-Cu-Zr Magnet with Abnormal Temperature Dependence of Coercivity.Nanomaterials (Basel, Switzerland) · 2023Article
- Cone-Shell Quantum Structures in Electric and Magnetic Fields as Switchable Traps for Photoexcited Charge Carriers.Nanomaterials (Basel, Switzerland) · 2023Article
- Control of Morphology and Substrate Etching in InAs/InP Droplet Epitaxy Quantum Dots for Single and Entangled Photon Emitters.ACS applied nano materials · 2022Article
- Structural and compositional analysis of (InGa)(AsSb)/GaAs/GaP Stranski-Krastanov quantum dots.Light, science & applications · 2021Article
- Independent Control Over Size and Surface Density of Droplet Epitaxial Nanostructures Using Ultra-Low Arsenic Fluxes.Nanomaterials (Basel, Switzerland) · 2021Article
Corrections and comments
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Authors and funding
2 authors.
Funding
Abstract
The fundamental understanding of quantum dot (QD) growth mechanism is essential to improve QD based optoelectronic devices. The size, shape, composition, and density of the QDs strongly influence the optoelectronic properties of the QDs. In this article, we present a detailed review on atomic-scale characterization of droplet epitaxy quantum dots by cross-sectional scanning tunneling microscopy (X-STM) and atom probe tomography (APT). We will discuss both strain-free GaAs/AlGaAs QDs and strained InAs/InP QDs grown by droplet epitaxy. The effects of various growth conditions on morphology and composition are presented. The efficiency of methods such as flushing technique is shown by comparing with conventional droplet epitaxy QDs to further gain control over QD height. A detailed characterization of etch pits in both QD systems is provided by X-STM and APT. This review presents an overview of detailed structural and compositional analysis that have assisted in improving the fabrication of QD based optoelectronic devices grown by droplet epitaxy.
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Registered trials
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