ArticleNanomaterials (Basel, Switzerland)2020
Color Centers Enabled by Direct Femto-Second Laser Writing in Wide Bandgap Semiconductors.
Article in Nanomaterials (Basel, Switzerland), 2020. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 11 papers.
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Who cites it
11 citing papers in PubMed.
- Femtosecond Laser-Written Nanoablations Containing Bright Antibunched Emitters on Gallium Nitride.ACS photonics · 2025Article
- Microsphere-assisted generation of localized optical emitters in 2D hexagonal boron nitride.Nanophotonics (Berlin, Germany) · 2025Article
- Low-dimensional solid-state single-photon emitters.Nanophotonics (Berlin, Germany) · 2025Review
- Infrared Absorption of Laser Patterned Sapphire AlMicromachines · 2025Article
- Photonic-Cavity-Enhanced Laser Writing of Color Centers in Diamond.Nano letters · 2024Article
- Programmable quantum emitter formation in silicon.Nature communications · 2024Article
- Photoluminescent Microbit Inscripion Inside Dielectric Crystals by Ultrashort Laser Pulses for Archival Applications.Micromachines · 2023Article
- Metal-Dielectric Nanopillar Antenna-Resonators for Efficient Collected Photon Rate from Silicon Carbide Color Centers.Nanomaterials (Basel, Switzerland) · 2023Article
- "Stealth Scripts": Ultrashort Pulse Laser Luminescent Microscale Encoding of Bulk Diamonds via Ultrafast Multi-Scale Atomistic Structural Transformations.Nanomaterials (Basel, Switzerland) · 2023Review
- High-power modelocked thin-disk oscillators as potential technology for high-rate material processing.Advanced optical technologies · 2021Review
- Photopolymerization strategy for the preparation of small-diameter artificial blood vessels with micro-nano structures on the inner wall.Biomedical optics express · 2021Article
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Authors and funding
6 authors.
Funding
No grant is acknowledged in the PubMed record.
Abstract
Color centers in silicon carbide are relevant for applications in quantum technologies as they can produce single photon sources or can be used as spin qubits and in quantum sensing applications. Here, we have applied femtosecond laser writing in silicon carbide and gallium nitride to generate vacancy-related color centers, giving rise to photoluminescence from the visible to the infrared. Using a 515 nm wavelength 230 fs pulsed laser, we produce large arrays of silicon vacancy defects in silicon carbide with a high localization within the confocal diffraction limit of 500 nm and with minimal material damage. The number of color centers formed exhibited power-law scaling with the laser fabrication energy indicating that the color centers are created by photoinduced ionization. This work highlights the simplicity and flexibility of laser fabrication of color center arrays in relevant materials for quantum applications.
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Registered trials
Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.