Evidence map›Paper›PMID 33344918›Full record

ArticleiScience2020

Highly Controllable and Silicon-Compatible Ferroelectric Photovoltaic Synapses for Neuromorphic Computing.

Shengliang Cheng, Zhen Fan, Jingjing Rao, Lanqing Hong, Qicheng Huang, Ruiqiang Tao, Zhipeng Hou, Minghui Qin, Min Zeng, Xubing Lu and 4 more

Abstract read
PubMed Full text at PMC Publisher
In one paragraph

Article in iScience, 2020. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 3 papers.

0numbers the graph read from it
0cells of the map it votes in
3citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

3 citing papers in PubMed.

  1. Article
  2. Article
  3. Article
4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

14 authors.

Shengliang ChengInstitute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, China.
Zhen FanInstitute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, China.
Jingjing RaoInstitute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, China.
Lanqing HongDepartment of Industrial Systems Engineering and Management, National University of Singapore, 117576, Singapore.
Qicheng HuangInstitute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, China.
Ruiqiang TaoInstitute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, China.
Zhipeng HouInstitute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, China.
Minghui QinInstitute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, China.
Min ZengInstitute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, China.
Xubing LuInstitute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, China.
Guofu ZhouGuangdong Provincial Key Laboratory of Optical Information Materials and Technology, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, China.
Guoliang YuanSchool of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, China.
Xingsen GaoInstitute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, China.
Jun-Ming LiuInstitute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, China.

Funding

No grant is acknowledged in the PubMed record.

6 · The paper itself

Abstract

Ferroelectric synapses using polarization switching (a purely electronic switching process) to induce analog conductance change have attracted considerable interest. Here, we propose ferroelectric photovoltaic (FePV) synapses that use polarization-controlled photocurrent as the readout and thus have no limitations on the forms and thicknesses of the constituent ferroelectric and electrode materials. This not only makes FePV synapses easy to fabricate but also reduces the depolarization effect and hence enhances the polarization controllability. As a proof-of-concept implementation, a Pt/Pb(Zr

Indexed as

Circuit SystemsDevicesElectrical EngineeringMaterials ScienceSemiconductor Manufacturing

Identifiers

PMID33344918
PMCPMC7736912

What OpenQuestion holds

Textmetadata
LicenceCC BY
Read underepoch 390

Registered trials

None linked

Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.