ArticlePolymers2020
Dielectric Response Spectroscopy as Means to Investigate Interfacial Effects for Ultra-Thin Film Polymer-Based High NA EUV Lithography.
Article in Polymers, 2020. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 1 paper.
What it found
Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.
The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.
The trial behind it
Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.
Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.
Who cites it
1 citing paper in PubMed, 9 citations in OpenAlex.
Corrections and comments
PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.
Authors and funding
3 authors at 1 institution in 1 country.
Funding
Abstract
Extreme ultra-violet lithography (EUVL) is the leading-edge technology to produce advanced nanoelectronics. The further development of EUVL is heavily based on implementing the so-called high numerical aperture (NA) EUVL, which will enable even smaller pitches up to 8 nm half pitch (HP). In anticipation of this high NA technology, it is crucial to assess the readiness of the current resist materials for the high NA regime to comply with the demanding requirements of resolution, line-edge roughness, and sensitivity (RLS). The achievable tighter pitches require lower film thicknesses for both resist and underlying transfer layers. A concern that is tied to the thinning down is the potential change in resist properties and behavior due to the interaction with the underlayer. To increase the fundamental understanding of ultra-thin films for high NA EUVL, a method to investigate the interplay of reduced film thickness and different patterning-relevant underlayers is developed by looking at the glass transition temperature (T
Indexed as
Identifiers
What OpenQuestion holds
Registered trials
Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.