ArticleMaterials (Basel, Switzerland)2020
Catalyst-Less and Transfer-Less Synthesis of Graphene on Si(100) Using Direct Microwave Plasma Enhanced Chemical Vapor Deposition and Protective Enclosures.
Article in Materials (Basel, Switzerland), 2020. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 8 papers.
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Who cites it
8 citing papers in PubMed.
- Low-Temperature Direct PECVD Synthesis of Graphene on Si(100) with Increased Methane Flow: Structure and Photoelectric Properties.Micromachines · 2026Article
- Advancing Graphene Synthesis: Low-Temperature Growth and Hydrogenation Mechanisms Using Plasma-Enhanced Chemical Vapor Deposition.Molecules (Basel, Switzerland) · 2024Article
- Influence of Synthesis Parameters on Structure and Characteristics of the Graphene Grown Using PECVD on Sapphire Substrate.Nanomaterials (Basel, Switzerland) · 2024Article
- Biosensor Based on Graphene Directly Grown by MW-PECVD for Detection of COVID-19 Spike (S) Protein and Its Entry Receptor ACE2.Nanomaterials (Basel, Switzerland) · 2023Article
- Plasma-Induced Surface Modification of Sapphire and Its Influence on Graphene Grown by Plasma-Enhanced Chemical Vapour Deposition.Nanomaterials (Basel, Switzerland) · 2023Article
- The direct growth of planar and vertical graphene on Si(100)RSC advances · 2022Article
- The Graphene Structure's Effects on the Current-Voltage and Photovoltaic Characteristics of Directly Synthesized Graphene/n-Si(100) Diodes.Nanomaterials (Basel, Switzerland) · 2022Article
- Graphene and Other 2D Layered Nanomaterials and Hybrid Structures: Synthesis, Properties and Applications.Materials (Basel, Switzerland) · 2021Article
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Authors and funding
4 authors.
Funding
Abstract
In this study, graphene was synthesized on the Si(100) substrates via the use of direct microwave plasma-enhanced chemical vapor deposition (PECVD). Protective enclosures were applied to prevent excessive plasma etching of the growing graphene. The properties of synthesized graphene were investigated using Raman scattering spectroscopy and atomic force microscopy. Synthesis time, methane and hydrogen gas flow ratio, temperature, and plasma power effects were considered. The synthesized graphene exhibited n-type self-doping due to the charge transfer from Si(100). The presence of compressive stress was revealed in the synthesized graphene. It was presumed that induction of thermal stress took place during the synthesis process due to the large lattice mismatch between the growing graphene and the substrate. Importantly, it was demonstrated that continuous horizontal graphene layers can be directly grown on the Si(100) substrates if appropriate configuration of the protective enclosure is used in the microwave PECVD process.
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