Evidence map›Paper›PMID 33276651›Full record

ArticleSensors (Basel, Switzerland)2020

Toward the Super Temporal Resolution Image Sensor with a Germanium Photodiode for Visible Light.

Nguyen Hoai Ngo, Anh Quang Nguyen, Fabian M Bufler, Yoshinari Kamakura, Hideki Mutoh, Takayoshi Shimura, Takuji Hosoi, Heiji Watanabe, Philippe Matagne, Kazuhiro Shimonomura and 3 more

Abstract read
PubMed Full text at PMC Publisher
In one paragraph

Article in Sensors (Basel, Switzerland), 2020. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 2 papers.

0numbers the graph read from it
0cells of the map it votes in
2citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

2 citing papers in PubMed.

  1. Article
  2. Article
4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

13 authors.

Nguyen Hoai NgoSchool of Science and Engineering, Ritsumeikan University, 1-1-1 Noji-Higashi, Kusatsu, Shiga 525-8577, Japan.
Anh Quang NguyenSchool of Electronics and Telecommunications, Hanoi University of Science and Technology, 1 Dai Co Viet, Bach Khoa, Hai Ba Trung, Hanoi 100803, Vietnam.ORCID 0000-0002-4198-4208
Fabian M BuflerIMEC, 3001 Leuven, Belgium.
Yoshinari KamakuraFaculty of Information Science and Technology, Osaka Institute of Technology, Hirakata Campus, 1-79-1 Kitayama, Hirakata City, Osaka 573-0196, Japan.
Hideki MutohLink Research Corporation, 291-4, Kuno, Odawara-shi, Kanagawa 250-0055, Japan.
Takayoshi ShimuraGraduate School of Engineering, Osaka University, 1-1 Yamada-oka, Suita, Osaka 565-0871, Japan.
Takuji HosoiGraduate School of Engineering, Osaka University, 1-1 Yamada-oka, Suita, Osaka 565-0871, Japan.
Heiji WatanabeGraduate School of Engineering, Osaka University, 1-1 Yamada-oka, Suita, Osaka 565-0871, Japan.
Philippe MatagneIMEC, 3001 Leuven, Belgium.
Kazuhiro ShimonomuraSchool of Science and Engineering, Ritsumeikan University, 1-1-1 Noji-Higashi, Kusatsu, Shiga 525-8577, Japan.ORCID 0000-0003-1814-7767
Kohsei TakeharaDepartment of Civil and Environmental Engineering, School of Science and Engineering, Kindai University, 3-4-1 Kowakae, Higashi-Osaka, Osaka 577-8502, Japan.
Edoardo CharbonAdvanced Quantum Architecture Laboratory, EPFL, Rue de la Maladière 71b, Case Postale 526, CH-2002 Neuchâtel, Switzerland.
Takeharu Goji EtohSchool of Science and Engineering, Ritsumeikan University, 1-1-1 Noji-Higashi, Kusatsu, Shiga 525-8577, Japan.

Funding

Grant-in-Aids for Scientific Research 19H02204(B)Grant-in-Aids for Scientific Research, Japan 18H01548(B)
6 · The paper itself

Abstract

The theoretical temporal resolution limit tT of a silicon photodiode (Si PD) is 11.1 ps. We call "super temporal resolution" the temporal resolution that is shorter than that limit. To achieve this resolution, Germanium is selected as a candidate material for the photodiode (Ge PD) for visible light since the absorption coefficient of Ge for the wavelength is several tens of times higher than that of Si, allowing a very thin PD. On the other hand, the saturation drift velocity of electrons in Ge is about 2/3 of that in Si. The ratio suggests an ultra-short propagation time of electrons in the Ge PD. However, the diffusion coefficient of electrons in Ge is four times higher than that of Si. Therefore, Monte Carlo simulations were applied to analyze the temporal resolution of the Ge PD. The estimated theoretical temporal resolution limit is 0.26 ps, while the practical limit is 1.41 ps. To achieve a super temporal resolution better than 11.1 ps, the driver circuit must operate at least 100 GHz. It is thus proposed to develop, at first, a short-wavelength infrared (SWIR) ultra-high-speed image sensor with a thicker and wider Ge PD, and then gradually decrease the size along with the progress of the driver circuits.

Indexed as

germaniumimage sensorsuper temporal resolutionSWIRtemporal resolution limitultra-high-speedvisible light

Identifiers

PMID33276651
PMCPMC7729775

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Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.