ArticleNanomaterials (Basel, Switzerland)2020
Schottky Barrier Height and Image Force Lowering in Monolayer MoS
Article in Nanomaterials (Basel, Switzerland), 2020. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 7 papers.
What it found
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The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.
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Who cites it
7 citing papers in PubMed.
- Strained 2D Semiconductor Lateral Heterojunctions via Grayscale Thermal-Scanning Probe Lithography.Small science · 2026Article
- Scalable Graphene-MoSMaterials (Basel, Switzerland) · 2025Article
- Effect of Chromium Adhesion Layer Thickness on Contact Resistance and Schottky Barrier Characteristics in WSeNanomaterials (Basel, Switzerland) · 2025Article
- Role of the oxide in memristive quasi-1D silicon nanowires.Nanoscale · 2025Article
- Article
- Enhanced Light Absorption and Efficient Carrier Collection in MoSNanomaterials (Basel, Switzerland) · 2022Article
- A Novel Carbon-Assisted Chemical Vapor Deposition Growth of Large-Area Uniform Monolayer MoSNanomaterials (Basel, Switzerland) · 2021Article
Corrections and comments
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Authors and funding
3 authors.
Funding
Abstract
Understanding the nature of the barrier height in a two-dimensional semiconductor/metal interface is an important step for embedding layered materials in future electronic devices. We present direct measurement of the Schottky barrier height and its lowering in the transition metal dichalcogenide (TMD)/metal interface of a field effect transistor. It is found that the barrier height at the gold/ single-layer molybdenum disulfide (MoS
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Registered trials
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