Evidence map›Paper›PMID 33170390›Full record

ArticleNanoscale research letters2020

Characterization and Fabrication of the CFM-JTE for 4H-SiC Power Device with High-Efficiency Protection and Increased JTE Dose Tolerance Window.

Yi Wen, Xiao-Jie Xu, Meng-Ling Tao, Xiao-Fei Lu, Xiao-Chuan Deng, Xuan Li, Jun-Tao Li, Zhi-Qiang Li, Bo Zhang

Abstract read
PubMed Full text at PMC Publisher
In one paragraph

Article in Nanoscale research letters, 2020. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 1 paper.

0numbers the graph read from it
0cells of the map it votes in
1citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

1 citing paper in PubMed.

  1. Review
4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

9 authors.

Yi WenSchool of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, 610054, China.
Xiao-Jie XuSchool of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, 610054, China.
Meng-Ling TaoSchool of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, 610054, China.
Xiao-Fei LuSchool of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, 610054, China.
Xiao-Chuan DengSchool of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, 610054, China. xcdeng@uestc.edu.cn.
Xuan LiSchool of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, 610054, China.
Jun-Tao LiMicrosystem and Terahertz Research Center, China Academy of Engineering Physics, Mianyang, 621900, China.
Zhi-Qiang LiMicrosystem and Terahertz Research Center, China Academy of Engineering Physics, Mianyang, 621900, China.
Bo ZhangSchool of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, 610054, China.

Funding

National Key Research and Development Program of China 2018YFB0905702National Natural Science Foundation of China 61974016Science Challenge Project (CN) TZ2018003
6 · The paper itself

Abstract

A 13.5 kV 4H-SiC PiN rectifier with a considerable active area of 0.1 cm

Indexed as

CFM-JTEHigh efficiencySilicon carbideUltra-high voltage

Identifiers

PMID33170390
PMCPMC7655890

What OpenQuestion holds

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Registered trials

None linked

Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.