Analog and Digital Bipolar Resistive Switching in Co-Al-Layered Double Hydroxide Memristor.

Yanmei Sun, Li Li, Keying Shi

Abstract read

In one paragraph

Article in Nanomaterials (Basel, Switzerland), 2020. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.

0numbers the graph read from it

0cells of the map it votes in

0citing papers in PubMed

–field-weighted citation impact

1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

0 citing papers in PubMed.

No citing paper in PubMed yet.

4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

3 authors.

Yanmei SunKey Laboratory of Functional Inorganic Material Chemistry, Ministry of Education, School of Chemistry and Material Science, Heilongjiang University, Harbin 150080, China.ORCID 0000-0002-9326-4560

Li LiKey Laboratory of Functional Inorganic Material Chemistry, Ministry of Education, School of Chemistry and Material Science, Heilongjiang University, Harbin 150080, China.

Keying ShiKey Laboratory of Functional Inorganic Material Chemistry, Ministry of Education, School of Chemistry and Material Science, Heilongjiang University, Harbin 150080, China.

Funding

National Natural Science Foundation of China 2167010747National Natural Science Foundation of China 21671060

6 · The paper itself

Abstract

We demonstrate a nonvolatile memristor based on Co-Al-layered double hydroxide (Co-Al LDH). We also introduce a memristor that has a hexazinone-adsorbing Co-Al LDH composite active layer. Memristor characteristics could be modulated by adsorbing hexazinone with Co-Al LDHs in the active layer. While different, Co-Al LDH-based memory devices show gradual current changes, and the memory device with small molecules of adsorbed hexazinone undergo abrupt changes. Both devices demonstrate programmable memory peculiarities. In particular, both memristors show rewritable resistive switching with electrical bistability (>10

Indexed as

Co–Al LDHshexazinonenonvolatile memoryresistive switching

Identifiers

PMID33105722

DOI10.3390/nano10112095

PMCPMC7690433

What OpenQuestion holds

Textmetadata

LicenceCC BY

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Registered trials

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Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.