Evidence map›Paper›PMID 33042746›Full record

ArticleAdvanced science (Weinheim, Baden-Wurttemberg, Germany)2020

Flexible Quasi-van der Waals Ferroelectric Hafnium-Based Oxide for Integrated High-Performance Nonvolatile Memory.

Houfang Liu, Tianqi Lu, Yuxing Li, Zhenyi Ju, Ruiting Zhao, Jingzhou Li, Minghao Shao, Hainan Zhang, Renrong Liang, Xiao Renshaw Wang and 4 more

Abstract read
PubMed Full text at PMC Publisher
In one paragraph

Article in Advanced science (Weinheim, Baden-Wurttemberg, Germany), 2020. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 6 papers.

0numbers the graph read from it
0cells of the map it votes in
6citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

6 citing papers in PubMed.

  1. Article
  2. Article
  3. CMOS-Compatible ZrOACS applied materials & interfaces · 2026
    Article
  4. Enhanced performance of flexible BiFeOScientific reports · 2024
    Article
  5. Article
  6. Article
4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

14 authors.

Houfang LiuInstitute of Microelectronics and Beijing National Research Center for Information Science and Technology (BNRist) Tsinghua University Beijing 100084 China.ORCID https://orcid.org/0000-0002-3941-8936
Tianqi LuInstitute of Microelectronics and Beijing National Research Center for Information Science and Technology (BNRist) Tsinghua University Beijing 100084 China.
Yuxing LiInstitute of Microelectronics and Beijing National Research Center for Information Science and Technology (BNRist) Tsinghua University Beijing 100084 China.
Zhenyi JuInstitute of Microelectronics and Beijing National Research Center for Information Science and Technology (BNRist) Tsinghua University Beijing 100084 China.
Ruiting ZhaoInstitute of Microelectronics and Beijing National Research Center for Information Science and Technology (BNRist) Tsinghua University Beijing 100084 China.
Jingzhou LiInstitute of Microelectronics and Beijing National Research Center for Information Science and Technology (BNRist) Tsinghua University Beijing 100084 China.
Minghao ShaoInstitute of Microelectronics and Beijing National Research Center for Information Science and Technology (BNRist) Tsinghua University Beijing 100084 China.
Hainan ZhangInstitute of Microelectronics and Beijing National Research Center for Information Science and Technology (BNRist) Tsinghua University Beijing 100084 China.
Renrong LiangInstitute of Microelectronics and Beijing National Research Center for Information Science and Technology (BNRist) Tsinghua University Beijing 100084 China.
Xiao Renshaw WangSchool of Physical and Mathematical Sciences & School of Electrical and Electronic Engineering Nanyang Technological University Singapore 639798 Singapore.
Rui GuoDepartment of Materials Science and Engineering National University of Singapore Singapore 117575 Singapore.
Jingsheng ChenDepartment of Materials Science and Engineering National University of Singapore Singapore 117575 Singapore.
Yi YangInstitute of Microelectronics and Beijing National Research Center for Information Science and Technology (BNRist) Tsinghua University Beijing 100084 China.
Tian-Ling RenInstitute of Microelectronics and Beijing National Research Center for Information Science and Technology (BNRist) Tsinghua University Beijing 100084 China.

Funding

No grant is acknowledged in the PubMed record.

6 · The paper itself

Abstract

Ferroelectric memories with ultralow-power-consumption are attracting a great deal of interest with the ever-increasing demand for information storage in wearable electronics. However, sufficient scalability, semiconducting compatibility, and robust flexibility of the ferroelectric memories remain great challenges, e.g., owing to Pb-containing materials, oxide electrode, and limited thermal stability. Here, high-performance flexible nonvolatile memories based on ferroelectric Hf

Indexed as

ferroelectric materialsflexible electronicsnonvolatile memoryquasi‐van der Waals heteroepitaxythin film transistors

Identifiers

PMID33042746
PMCPMC7539221

What OpenQuestion holds

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Registered trials

None linked

Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.