ArticleAdvanced science (Weinheim, Baden-Wurttemberg, Germany)2020
Double Negative Differential Resistance Device Based on Hafnium Disulfide/Pentacene Hybrid Structure.
Article in Advanced science (Weinheim, Baden-Wurttemberg, Germany), 2020. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 7 papers.
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Who cites it
7 citing papers in PubMed.
- Wafer-Scale 3D Integration for High-Density Multi-Valued Neuromorphic Logic.Advanced science (Weinheim, Baden-Wurttemberg, Germany) · 2026Article
- Ternary Logic Transistors Using Multi-Stacked 2D Electron Gas Channels in Ultrathin Oxide Heterostructures.Advanced science (Weinheim, Baden-Wurttemberg, Germany) · 2025Article
- Recent Advance in Synaptic Plasticity Modulation Techniques for Neuromorphic Applications.Nano-micro letters · 2024Review
- Temperature-Dependent Phase Transition in WSSmall science · 2024Article
- Nanomaterials Based Micro/Nanoelectromechanical System (MEMS and NEMS) Devices.Micromachines · 2024Review
- Recent Advances on Multivalued Logic Gates: A Materials Perspective.Advanced science (Weinheim, Baden-Wurttemberg, Germany) · 2021Review
- Double Negative Differential Resistance Device Based on Hafnium Disulfide/Pentacene Hybrid Structure.Advanced science (Weinheim, Baden-Wurttemberg, Germany) · 2020Article
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Authors and funding
13 authors.
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Abstract
Recently, combinations of 2D van der Waals (2D vdW) materials and organic materials have attracted attention because they facilitate the formation of various heterojunctions with excellent interface quality owing to the absence of dangling bonds on their surface. In this work, a double negative differential resistance (D-NDR) characteristic of a hybrid 2D vdW/organic tunneling device consisting of a hafnium disulfide/pentacene heterojunction and a 3D pentacene resistor is reported. This D-NDR phenomenon is achieved by precisely controlling an NDR peak voltage with the pentacene resistor and then integrating two distinct NDR devices in parallel. Then, the operation of a controllable-gain amplifier configured with the D-NDR device and an n-channel transistor is demonstrated using the Cadence Spectre simulation platform. The proposed D-NDR device technology based on a hybrid 2D vdW/organic heterostructure provides a scientific foundation for various circuit applications that require the NDR phenomenon.
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