Fabrication and Characterization of Oxygenated AlN/4H-SiC Heterojunction Diodes.

Dong-Hyeon Kim, Seong-Ji Min, Jong-Min Oh, Sang-Mo Koo

Abstract read

In one paragraph

Article in Materials (Basel, Switzerland), 2020. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 2 papers.

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2citing papers in PubMed

–field-weighted citation impact

1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

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3 · Its place in the literature

Who cites it

2 citing papers in PubMed.

Carbothermal Reduction Synthesis of Aluminum Nitride from Al(OH)Materials (Basel, Switzerland) · 2021
Article
Influence of Gas Annealing on Sensitivity of AlN/4H-Sic-Based Temperature Sensors.Materials (Basel, Switzerland) · 2021
Article

4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

4 authors.

Dong-Hyeon KimDepartment of Electronic Materials Engineering, Kwangwoon University, 20 Kwangwoon-ro, Nowon-gu, Seoul 01897, Korea.

Seong-Ji MinDepartment of Electronic Materials Engineering, Kwangwoon University, 20 Kwangwoon-ro, Nowon-gu, Seoul 01897, Korea.

Jong-Min OhDepartment of Electronic Materials Engineering, Kwangwoon University, 20 Kwangwoon-ro, Nowon-gu, Seoul 01897, Korea.

Sang-Mo KooDepartment of Electronic Materials Engineering, Kwangwoon University, 20 Kwangwoon-ro, Nowon-gu, Seoul 01897, Korea.

Funding

Korea Institute of Energy Technology Evaluation and Planning 20194010000050Korea Institute of Energy Technology Evaluation and Planning 20194010201810

6 · The paper itself

Abstract

The effects of rapid thermal annealing (RTA) on Schottky barrier diodes (SBDs) made from oxygenated aluminum nitride (AlN) thin films deposited on a silicon carbide (SiC) substrate using radio frequency sputtering were investigated. The annealed SBD devices exhibited a 10x increase in the on/off current ratio vs. non-annealed devices for measurement temperatures ranging from 300 K to 450 K. The ideality factor, derived from the current density-voltage (J-V) characterization, increased by a factor of ~2.2 after annealing, whereas the barrier height decreased from ~0.91 to ~0.68 eV. Additionally, Auger electron spectroscopy indicated decreased concentrations of atomic oxygen in the AlN thin film, from ~36% before, to ~24% after annealing. This may have contributed to the reduced barrier height and improved on/off ratio in the annealed AlN/SiC diodes.

Indexed as

aluminum nitrideAuger electron spectroscopyradio frequency sputteringrapid thermal annealingSchottky barrier diodessilicon carbide

Identifiers

PMID33003505

DOI10.3390/ma13194335

PMCPMC7579660

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