Evidence map›Paper›PMID 32939162›Full record

ArticleScience and technology of advanced materials2020

High-performance extended-gate ion-sensitive field-effect transistors with multi-gate structure for transparent, flexible, and wearable biosensors.

Jin-Hyeok Jeon, Won-Ju Cho

Abstract read
In one paragraph

Article in Science and technology of advanced materials, 2020. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 5 papers.

0numbers the graph read from it
0cells of the map it votes in
5citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

5 citing papers in PubMed.

  1. Recent Progress in Flexible and Wearable All Organic Photoplethysmography Sensors for SpOAdvanced science (Weinheim, Baden-Wurttemberg, Germany) · 2023
    Review
  2. Article
  3. Review
  4. Comparison of NHMembranes · 2022
    Article
  5. Article
4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

2 authors.

Jin-Hyeok JeonDepartment of Electronic Materials Engineering, Kwangwoon University, Seoul, Republic of Korea.ORCID https://orcid.org/0000-0003-3696-6782
Won-Ju ChoDepartment of Electronic Materials Engineering, Kwangwoon University, Seoul, Republic of Korea.

Funding

No grant is acknowledged in the PubMed record.

6 · The paper itself

Abstract

In this study, we developed a high-performance extended-gate ion-sensitive field-effect transistor (EG-ISFET) sensor on a flexible polyethylene naphthalate (PEN) substrate. The EG-ISFET sensor comprises a tin dioxide (SnO

Indexed as

102 Porous / Nanoporous / Nanostructured materials208 Sensors and actuators306 Thin film / Coatingscapacitive couplingExtended-gate ion-sensitive field-effect transistorflexiblehigh-k engineered gate oxidein-plane control gatepolyethylene naphthalate

Identifiers

PMID32939162
PMCPMC7476522

What OpenQuestion holds

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LicenceCC BY
Read underepoch 390

Registered trials

None linked

Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.