Evidence map›Paper›PMID 32934210›Full record

ArticleNature communications2020

Ultrahigh drive current and large selectivity in GeS selector.

Shujing Jia, Huanglong Li, Tamihiro Gotoh, Christophe Longeaud, Bin Zhang, Juan Lyu, Shilong Lv, Min Zhu, Zhitang Song, Qi Liu and 2 more

Abstract read
In one paragraph

Article in Nature communications, 2020. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 21 papers.

0numbers the graph read from it
0cells of the map it votes in
21citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

21 citing papers in PubMed.

  1. Article
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  6. Article
  7. Solution-Phase Design of Emerging Nanomaterials.Chemistry of materials : a publication of the American Chemical Society · 2025
    Review
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  9. Article
  10. Article
  11. Article
  12. Article
  13. Artificial sensory system based on memristive devices.Exploration (Beijing, China) · 2024
    Review
  14. Review
  15. Article
  16. Article
  17. Article
  18. Article
  19. Article
  20. Article
4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

12 authors.

Shujing Jia *State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-System and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China.ORCID http://orcid.org/0000-0003-1394-7028
Huanglong Li *Department of Precision Instrument, Tsinghua University, Beijing, 100084, China.
Tamihiro GotohDepartment of Physics, Graduate School of Science and Technology, Gunma University, Maebashi, 3718510, Japan.ORCID http://orcid.org/0000-0001-5659-3624
Christophe LongeaudGroup of Electrical Engineering of Paris, CNRS, Centrale Supelec, Paris Saclay and Sorbonne Universities, Plateau de Moulon, 91190, Gif sur Yvette, France.ORCID http://orcid.org/0000-0002-7175-3267
Bin ZhangAnalytical and Testing Center of Chongqing University, Chongqing, 401331, China.
Juan LyuDepartment of Precision Instrument, Tsinghua University, Beijing, 100084, China.
Shilong LvState Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-System and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China.
Min ZhuState Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-System and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China. minzhu@mail.sim.ac.cn.ORCID http://orcid.org/0000-0001-8057-9742
Zhitang SongState Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-System and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China. ztsong@mail.sim.ac.cn.ORCID http://orcid.org/0000-0001-7859-9429
Qi LiuKey Laboratory of Microelectronic Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029, China. liuqi@ime.ac.cn.ORCID http://orcid.org/0000-0001-7062-831X
John RobertsonEngineering Department, University of Cambridge, Cambridge, CB3 0FA, UK.
Ming LiuKey Laboratory of Microelectronic Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029, China.

Funding

National Natural Science Foundation of China (National Science Foundation of China) 61704096, 61974082
6 · The paper itself

Abstract

Selector devices are indispensable components of large-scale nonvolatile memory and neuromorphic array systems. Besides the conventional silicon transistor, two-terminal ovonic threshold switching device with much higher scalability is currently the most industrially favored selector technology. However, current ovonic threshold switching devices rely heavily on intricate control of material stoichiometry and generally suffer from toxic and complex dopants. Here, we report on a selector with a large drive current density of 34 MA cm

Identifiers

PMID32934210
PMCPMC7493911

What OpenQuestion holds

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Registered trials

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Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.