ArticleNano convergence2020
Double-gate thin film transistor with suspended-gate applicable to tactile force sensor.
Article in Nano convergence, 2020. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 1 paper.
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1 citing paper in PubMed.
- L-shape triple defects in a phononic crystal for broadband piezoelectric energy harvesting.Nano convergence · 2022Article
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8 authors.
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Abstract
This paper presents a straightforward, low-cost, and effective integration process for the fabrication of membrane gate thin film transistors (TFTs) with an air gap. The membrane gate TFT with an air gap can be used as the highly sensitive tactile force sensor. The suspended membrane gate with an air gap as the insulator layer is formed by multiple photolithography steps and photoresist sacrificial layers. The viscosity of the photoresist and the spin speed was used to modify the thickness of the air gap during the coating process. The tactile force was measured by monitoring the drain current of the TFT as the force changed the thickness of the air gap. The sensitivity of the devices was enhanced by an optimal gate size and low Young's modulus of the gate material. This simple process has the potential for the production of small, versatile, and highly sensitive sensors.
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