ArticleThe journal of physical chemistry letters2020
Lock-in Ultrafast Electron Microscopy Simultaneously Visualizes Carrier Recombination and Interface-Mediated Trapping.
Article in The journal of physical chemistry letters, 2020. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 6 papers.
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Who cites it
6 citing papers in PubMed.
- Density functional theory-accelerated design of perovskite quantum dots: unlocking atomic-level control for next-generation optoelectronics and sensors.RSC advances · 2025Review
- Roadmap for Quantum Nanophotonics with Free Electrons.ACS photonics · 2025Review
- Revisiting the Marcus inverted regime: modulation strategies for photogenerated ultrafast carrier transfer from semiconducting quantum dots to metal oxides.RSC advances · 2025Review
- Imaging hot photocarrier transfer across a semiconductor heterojunction with ultrafast electron microscopy.Proceedings of the National Academy of Sciences of the United States of America · 2024Article
- Picosecond carrier dynamics in InAs and GaAs revealed by ultrafast electron microscopy.Science advances · 2024Article
- Spatiotemporal Visualization of Photogenerated Carriers on an Avalanche Photodiode Surface Using Ultrafast Scanning Electron Microscopy.Nanomaterials (Basel, Switzerland) · 2024Article
Corrections and comments
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Authors and funding
5 authors.
Funding
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Abstract
Visualizing charge carrier flow over interfaces or near surfaces meets great challenges concerning resolution and vastly different time scales of bulk and surface dynamics. Ultrafast or four-dimensional scanning electron microscopy (USEM) using a laser pump electron probe scheme circumvents the optical diffraction limit, but disentangling surface-mediated trapping and ultrafast carrier dynamics in a single measurement scheme has not yet been demonstrated. Here, we present lock-in USEM, which simultaneously visualizes fast bulk recombination and slow trapping. As a proof of concept, we show that the surface termination on GaAs, i.e., Ga or As, profoundly influences ultrafast movies. We demonstrate the differences can be attributed to trapping-induced surface voltages of approximately 100-200 mV, which is further supported by secondary electron particle tracing calculations. The simultaneous visualization of both competing processes opens new perspectives for studying carrier transport in layered, nanostructured, and two-dimensional semiconductors, where carrier trapping constitutes a major bottleneck for device efficiency.
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Registered trials
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