ArticleNanomaterials (Basel, Switzerland)2020
Emulation of Biological Synapse Characteristics from Cu/AlN/TiN Conductive Bridge Random Access Memory.
Article in Nanomaterials (Basel, Switzerland), 2020. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 11 papers.
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Who cites it
11 citing papers in PubMed.
- In Situ Transmission Electron Microscopy Observation of Redox-Structure-Coupled Resistive Switching in High-Entropy Oxide Memristors.ACS nano · 2026Article
- Effect of Electrochemically Active Top Electrode Materials on Nanoionic Conductive Bridge YNanomaterials (Basel, Switzerland) · 2024Article
- Resistive Switching Devices for Neuromorphic Computing: From Foundations to Chip Level Innovations.Nanomaterials (Basel, Switzerland) · 2024Review
- Enhanced Short-Term Memory Plasticity of WOx-Based Memristors by Inserting AlOMaterials (Basel, Switzerland) · 2022Article
- Resistive Switching Characteristics of Alloyed AlSiOMaterials (Basel, Switzerland) · 2022Article
- Self-Powered Resistance-Switching Properties of PrNanomaterials (Basel, Switzerland) · 2022Article
- An Artificial Synapse Based on CsPbI3 Thin Film.Micromachines · 2022Article
- Oxygen Concentration Effect on Conductive Bridge Random Access Memory of InWZnO Thin Film.Nanomaterials (Basel, Switzerland) · 2021Article
- Emulating Artificial Synaptic Plasticity Characteristics from SiOMicromachines · 2021Article
- Improved Pulse-Controlled Conductance Adjustment in Trilayer Resistors by Suppressing Current Overshoot.Nanomaterials (Basel, Switzerland) · 2020Article
- Synaptic Characteristics from Homogeneous Resistive Switching in Pt/AlNanomaterials (Basel, Switzerland) · 2020Article
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2 authors.
Funding
Abstract
Here, we present the synaptic characteristics of AlN-based conductive bridge random access memory (CBRAM) as a synaptic device for neuromorphic systems. Both non-volatile and volatile memory are observed by simply controlling the strength of the Cu filament inside the AlN film. For non-volatile switching induced by high compliance current (CC), good retention with a strong Cu metallic filament is verified. Low-resistance state (LRS) and high-resistance state (HRS) conduction follow metallic Ohmic and trap-assisted tunneling (TAT), respectively, which are supported by I-V fitting and temperature dependence. The transition from long-term plasticity (LTP) to short-term plasticity (STP) is demonstrated by increasing the pulse interval time for synaptic device application. Also, paired-pulse facilitation (PPF) in the nervous system is mimicked by sending two identical pulses to the CBRAM device to induce STP. Finally, potentiation and depression are achieved by gradually increasing the set and reset voltage in pulse transient mode.
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