ArticleNature communications2020
High-performance p-channel transistors with transparent Zn doped-CuI.
Article in Nature communications, 2020. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 19 papers.
What it found
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The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.
The trial behind it
Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.
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Who cites it
19 citing papers in PubMed.
- Lattice Disorder in CuI Enables Filament-Free Transparent Memristors.Advanced science (Weinheim, Baden-Wurttemberg, Germany) · 2026Article
- High Performance P-Channel Transistor Based on Amorphous Tellurium Trioxide.Advanced materials (Deerfield Beach, Fla.) · 2025Article
- Two-dimensional β-phase copper iodide: a promising candidate for low-temperature thermoelectric applications.Scientific reports · 2025Article
- Fabrication and Characterization of Flexible CuI-Based Photodetectors on Mica Substrates by a Low-Temperature Solution Process.Materials (Basel, Switzerland) · 2024Article
- An inorganic-blended p-type semiconductor with robust electrical and mechanical properties.Nature communications · 2024Article
- Article
- The impact of thickness-related grain boundary migration on hole concentration and mobility of p-type transparent conducting CuI films.RSC advances · 2024Article
- Limits to Hole Mobility and Doping in Copper Iodide.Chemistry of materials : a publication of the American Chemical Society · 2023Article
- Experimental Investigation of Thermodynamic Stabilization in Boron Imidazolate Frameworks (BIFs) Synthesized by Mechanochemistry.The journal of physical chemistry. C, Nanomaterials and interfaces · 2023Article
- Low-Voltage Solution-Processed Zinc-Doped CuI Thin Film Transistors with NOR Logic and Artificial Synaptic Function.Nanomaterials (Basel, Switzerland) · 2023Article
- Ferroelectric Wide-Bandgap Metal Halide Perovskite Field-Effect Transistors: Toward Transparent Electronics.Advanced science (Weinheim, Baden-Wurttemberg, Germany) · 2023Article
- High-performance and low-power source-gated transistors enabled by a solution-processed metal oxide homojunction.Proceedings of the National Academy of Sciences of the United States of America · 2023Article
- The Role of Zn Substitution in Improving the Electrical Properties of CuI Thin Films and Optoelectronic Performance of CuI MSM Photodetectors.Materials (Basel, Switzerland) · 2022Article
- Optoelectronic properties and ultrafast carrier dynamics of copper iodide thin films.Nature communications · 2022Article
- Evaporated nanometer chalcogenide films for scalable high-performance complementary electronics.Nature communications · 2022Article
- Atomic Layer Deposition of Metal Oxides and Chalcogenides for High Performance Transistors.Advanced science (Weinheim, Baden-Wurttemberg, Germany) · 2022Review
- High-performance hysteresis-free perovskite transistors through anion engineering.Nature communications · 2022Article
- Effects of Iodine Doping on Electrical Characteristics of Solution-Processed Copper Oxide Thin-Film Transistors.Materials (Basel, Switzerland) · 2021Article
- Engineering Copper Iodide (CuI) for Multifunctional p-Type Transparent Semiconductors and Conductors.Advanced science (Weinheim, Baden-Wurttemberg, Germany) · 2021Review
Corrections and comments
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Authors and funding
7 authors.
Funding
Abstract
'Ideal' transparent p-type semiconductors are required for the integration of high-performance thin-film transistors (TFTs) and circuits. Although CuI has recently attracted attention owing to its excellent opto-electrical properties, solution processability, and low-temperature synthesis, the uncontrolled copper vacancy generation and subsequent excessive hole doping hinder its use as a semiconductor material in TFT devices. In this study, we propose a doping approach through soft chemical solution process and transparent p-type Zn-doped CuI semiconductor for high-performance TFTs and circuits. The optimised TFTs annealed at 80 °C exhibit a high hole mobility of over 5 cm
Identifiers
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Registered trials
Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.